| No. |
Part Name |
Description |
Manufacturer |
| 1591 |
2N2369A1 |
HIGH SPEED / MEDIUM POWER / NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED TO-18 PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 1592 |
2N2369ACSM |
HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 1593 |
2N2370 |
PNP planar for alloy transistor replacements - silicon |
Sprague |
| 1594 |
2N2371 |
PNP planar for alloy transistor replacements - silicon |
Sprague |
| 1595 |
2N2372 |
PNP planar for alloy transistor replacements - silicon |
Sprague |
| 1596 |
2N2373 |
PNP planar for alloy transistor replacements - silicon |
Sprague |
| 1597 |
2N2398 |
MADT® PNP germanium transistor for UHF applications |
Sprague |
| 1598 |
2N2399 |
MADT® PNP germanium transistor for UHF applications |
Sprague |
| 1599 |
2N2405 |
NPN silicon annular transistor designed for medium-power applications |
Motorola |
| 1600 |
2N2415 |
Germanium ultra-high frequency transistor for very low-noise, high-gain amplifiers, oscillators, mixers, and frequency multipliers |
Motorola |
| 1601 |
2N2416 |
Germanium ultra-high frequency transistor for very low-noise, high-gain amplifiers, oscillators, mixers, and frequency multipliers |
Motorola |
| 1602 |
2N2453 |
Dual NPN silicon transistor designed for differential amplifier applications |
Motorola |
| 1603 |
2N2453A |
Dual NPN silicon transistor designed for differential amplifier applications |
Motorola |
| 1604 |
2N2480 |
NPN silicon annular Star dual transistor matched pair for differential amplifiers and other applications |
Motorola |
| 1605 |
2N2480A |
NPN silicon annular Star dual transistor matched pair for differential amplifiers and other applications |
Motorola |
| 1606 |
2N2483 |
NPN Silicon Planar Transistor for low-level audio applications |
Newmarket Transistors NKT |
| 1607 |
2N2484 |
NPN Silicon Planar Transistor for low-level audio applications |
Newmarket Transistors NKT |
| 1608 |
2N2484CSM |
HIGH SPEED, MEDIUM POWER, NPN GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 1609 |
2N2537 |
NPN silicon annular Star transistor for high-speed switching |
Motorola |
| 1610 |
2N2538 |
NPN silicon annular Star transistor for high-speed switching |
Motorola |
| 1611 |
2N2539 |
NPN silicon annular Star transistor for high-speed switching |
Motorola |
| 1612 |
2N2540 |
NPN silicon annular Star transistor for high-speed switching |
Motorola |
| 1613 |
2N2573 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 1614 |
2N2574 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 1615 |
2N2575 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 1616 |
2N2576 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 1617 |
2N2577 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 1618 |
2N2578 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 1619 |
2N2579 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 1620 |
2N2635 |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
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