| No. |
Part Name |
Description |
Manufacturer |
| 1711 |
2N2946 |
PNP silicon annular transistor designed for low-level, high-speed chopper applications |
Motorola |
| 1712 |
2N2947 |
NPN silicon annular transistor for power amplifier applications to 100MHz |
Motorola |
| 1713 |
2N2948 |
NPN silicon annular transistor for power amplifier applications to 100MHz |
Motorola |
| 1714 |
2N2949 |
NPN silicon annular transistors for power amplifier and driver applications to 100MHz, TO-107 case |
Motorola |
| 1715 |
2N2950 |
NPN silicon annular transistors for power amplifier and driver applications to 100MHz, TO-102 case |
Motorola |
| 1716 |
2N2951 |
SEPT® NPN planar epitaxial silicon power transistor for amplifiers |
Sprague |
| 1717 |
2N2952 |
SEPT® NPN planar epitaxial silicon power transistor for amplifiers |
Sprague |
| 1718 |
2N2955 |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
| 1719 |
2N2956 |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
| 1720 |
2N2957 |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
| 1721 |
2N2972 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 1722 |
2N2973 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 1723 |
2N2974 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 1724 |
2N2975 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 1725 |
2N2976 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 1726 |
2N2977 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 1727 |
2N2978 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 1728 |
2N2979 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 1729 |
2N297A |
PNP germanium power transistor for military and industrial power switching and amplifier applications |
Motorola |
| 1730 |
2N3011 |
NPN silicon low-power transistor designed for switching applications |
Motorola |
| 1731 |
2N3019CSM |
HIGH FREQUENCY, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 1732 |
2N3021 |
PNP silicon power transistor for Class C power amplifiers |
Motorola |
| 1733 |
2N3022 |
PNP silicon power transistor for Class C power amplifiers |
Motorola |
| 1734 |
2N3023 |
PNP silicon power transistor for Class C power amplifiers |
Motorola |
| 1735 |
2N3024 |
PNP silicon power transistor for Class C power amplifiers |
Motorola |
| 1736 |
2N3025 |
PNP silicon power transistor for Class C power amplifiers |
Motorola |
| 1737 |
2N3026 |
PNP silicon power transistor for Class C power amplifiers |
Motorola |
| 1738 |
2N3043 |
Dual NPN silicon transistor designed for low-level, low-noise differential amplifier applications |
Motorola |
| 1739 |
2N3044 |
Dual NPN silicon transistor designed for low-level, low-noise differential amplifier applications |
Motorola |
| 1740 |
2N3045 |
Dual NPN silicon transistor designed for low-level, low-noise differential amplifier applications |
Motorola |
| | | |
