| No. |
Part Name |
Description |
Manufacturer |
| 1801 |
2N3343 |
PNP planar for alloy chopper replacements - silicon transistor |
Sprague |
| 1802 |
2N3344 |
PNP planar for alloy chopper replacements - silicon transistor |
Sprague |
| 1803 |
2N3345 |
PNP planar for alloy chopper replacements - silicon transistor |
Sprague |
| 1804 |
2N3346 |
PNP planar for alloy chopper replacements - silicon transistor |
Sprague |
| 1805 |
2N3375 |
Silicon NPN epitaxial high frequency power transistor for VHF and UHF power stages, oscillators and driver stages |
AEG-TELEFUNKEN |
| 1806 |
2N3375 |
Silicon NPN overlay epitaxial planar transistor for VHF/UHF transmitting applications |
ICCE |
| 1807 |
2N3375 |
NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz |
Motorola |
| 1808 |
2N3375 |
Silicon Epitaxial Planar Overlay Transistor, collector connected to the case, intended for VHF/UHF transmitting |
Philips |
| 1809 |
2N3375 |
Silicon NPN planar epitaxial transistor for 175 MHz transmitters at 28 V supply voltage |
VALVO |
| 1810 |
2N3409 |
NPN silicon annular Star dual transistors for differential amplifiers applications |
Motorola |
| 1811 |
2N3410 |
NPN silicon annular Star dual transistors for differential amplifiers applications |
Motorola |
| 1812 |
2N3411 |
NPN silicon annular Star dual transistors for differential amplifiers applications |
Motorola |
| 1813 |
2N3418 |
Planar transistor for switching applications |
SGS-ATES |
| 1814 |
2N3419 |
Planar transistor for switching applications |
SGS-ATES |
| 1815 |
2N3420 |
Planar transistor for switching applications |
SGS-ATES |
| 1816 |
2N3421 |
Planar transistor for switching applications |
SGS-ATES |
| 1817 |
2N3423 |
Dual NPN silicon transistor designed for use as sens and high-frequency differential amplifiers |
Motorola |
| 1818 |
2N3424 |
Dual NPN silicon transistor designed for use as sens and high-frequency differential amplifiers |
Motorola |
| 1819 |
2N3425 |
Dual NPN silicon transistor designed for use as a high-frequency sense amplifier |
Motorola |
| 1820 |
2N3439CSM4 |
HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 1821 |
2N3439CSM4R |
HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 1822 |
2N3440CSM4R |
HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 1823 |
2N3440S |
Silicon planar epitaxial NPN transistor intended for high voltage switching and linear amplifier applications |
SGS-ATES |
| 1824 |
2N3440S |
Planar transistor for switching applications |
SGS-ATES |
| 1825 |
2N3444 |
NPN silicon transistor for high-current saturated switching and core driver applications |
Motorola |
| 1826 |
2N3485 |
PNP silicon annular Star transistor for high-speed switching, complementary circuitry and DC to VHF amplifier applications |
Motorola |
| 1827 |
2N3485A |
PNP silicon annular Star transistor for high-speed switching, complementary circuitry and DC to VHF amplifier applications |
Motorola |
| 1828 |
2N3486 |
PNP silicon annular Star transistor for high-speed switching, complementary circuitry and DC to VHF amplifier applications |
Motorola |
| 1829 |
2N3486A |
PNP silicon annular Star transistor for high-speed switching, complementary circuitry and DC to VHF amplifier applications |
Motorola |
| 1830 |
2N3494 |
PNP silicon annular Star transistor for high voltage switching and DC to VHF amplifier applications |
Motorola |
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