| No. |
Part Name |
Description |
Manufacturer |
| 1891 |
2N3810 |
Dual PNP silicon transistor designed for differential amplifier applications |
Motorola |
| 1892 |
2N3810A |
Dual PNP silicon transistor designed for differential amplifier applications |
Motorola |
| 1893 |
2N3810DCSM |
DUAL HIGH GAIN PNP TRANSISTORS IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 1894 |
2N3811 |
Dual PNP silicon transistor designed for differential amplifier applications |
Motorola |
| 1895 |
2N3811A |
Dual PNP silicon transistor designed for differential amplifier applications |
Motorola |
| 1896 |
2N3812 |
Dual PNP silicon transistor designed for differential amplifier applications, TO-89 case |
Motorola |
| 1897 |
2N3813 |
Dual PNP silicon transistor designed for differential amplifier applications, TO-89 case |
Motorola |
| 1898 |
2N3814 |
Dual PNP silicon transistor designed for differential amplifier applications, TO-89 case |
Motorola |
| 1899 |
2N3815 |
Dual PNP silicon transistor designed for differential amplifier applications, TO-89 case |
Motorola |
| 1900 |
2N3816 |
Dual PNP silicon transistor designed for differential amplifier applications, TO-89 case |
Motorola |
| 1901 |
2N3816A |
Dual PNP silicon transistor designed for differential amplifier applications |
Motorola |
| 1902 |
2N3817 |
Dual PNP silicon transistor designed for differential amplifier applications, TO-89 case |
Motorola |
| 1903 |
2N3817A |
Dual PNP silicon transistor designed for differential amplifier applications |
Motorola |
| 1904 |
2N3818 |
NPN silicon transistor for high-frequency power applications to 150 MHz |
Motorola |
| 1905 |
2N382 |
PNP germanium transistor for small-signal audio amplifiers, Class B push-pull output stages and medium-speed switching circuits |
Motorola |
| 1906 |
2N3821 |
N-channel junction silicon field-effect transistor designed for audio amplifier, chopper and switching applications |
Motorola |
| 1907 |
2N3822 |
N-channel junction silicon field-effect transistor designed for audio amplifier, chopper and switching applications |
Motorola |
| 1908 |
2N3823 |
Silicon N-channel junction field-effect transistor designed for VHF amplifier and mixer applications |
Motorola |
| 1909 |
2N3824 |
N-channel junction silicon field-effect transistor designed for audio amplifier, chopper and switching applications |
Motorola |
| 1910 |
2N383 |
PNP germanium transistor for small-signal audio amplifiers, Class B push-pull output stages and medium-speed switching circuits |
Motorola |
| 1911 |
2N3839 |
NPN silicon annular small-signal amplifier transistor designed for amplifiers, oscillators and mixers |
Motorola |
| 1912 |
2N3839 |
Epitaxial planar NPN transistor intended for amplifier, oscillator and converter applications up to 500MHz, low noise |
SGS-ATES |
| 1913 |
2N3866 |
Silicon NPN epitaxial planar transistor for VHF and UHF power stages, oscillator stages and driver stages |
AEG-TELEFUNKEN |
| 1914 |
2N3866 |
NPN silicon transistor, designed for amplifier, frequency-multiplier, or oscillator applications in military and industrial equipment |
Motorola |
| 1915 |
2N3866 |
40-Watt Peak-Envelope-Power Trasistor Amplifier for AM Transmitters in the Aircraft Band (118 to 136 MHz) - Application Note |
RCA Solid State |
| 1916 |
2N3866 |
Epitaxial planar NPN transistor designed for VHF-UHF class A, B or C amplifier circuits and oscillator applications |
SGS-ATES |
| 1917 |
2N3866 |
Transistor for high frequency amplifiers |
SGS-ATES |
| 1918 |
2N3866 |
Silicon NPN planar epitaxial transistor for driver stages in transmitters up to 400 MHz at 28 V supply voltage |
VALVO |
| 1919 |
2N3867 |
Planar transistor for switching applications |
SGS-ATES |
| 1920 |
2N3868 |
Planar transistor for switching applications |
SGS-ATES |
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