| No. |
Part Name |
Description |
Manufacturer |
| 1921 |
2N3903 |
NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications |
Semtech |
| 1922 |
2N3904 |
GENERAL PURPOSE NPN TRANSISTOR FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 1923 |
2N3904 |
NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications |
Semtech |
| 1924 |
2N3904CSM |
GENERAL PURPOSE NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 1925 |
2N3905 |
NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications |
Semtech |
| 1926 |
2N3906 |
NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications |
Semtech |
| 1927 |
2N3924 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
| 1928 |
2N3924 |
Silicon NPN planar epitaxial transistor for transmitter applications up to 175 MHz at 13.5 V supply voltage |
VALVO |
| 1929 |
2N3925 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
| 1930 |
2N3926 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
| 1931 |
2N3926 |
Silicon NPN planar epitaxial transistor for 175 MHz transmitters at 13.5 V supply voltage |
VALVO |
| 1932 |
2N3927 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
| 1933 |
2N3927 |
Silicon NPN planar epitaxial transistor for 175 MHz transmitters at 13.5 V supply voltage |
VALVO |
| 1934 |
2N3948 |
NPN silicon RF power transistor, ideal for CATV applications or military and industrial equipment |
Motorola |
| 1935 |
2N3950 |
NPN silicon RF power transistor designed for high-power RF amplifier applications |
Motorola |
| 1936 |
2N3959 |
NPN silicon transistor particularly well suited for high-speed current-mode logic switching applications |
Motorola |
| 1937 |
2N3960 |
NPN silicon transistor particularly well suited for high-speed current-mode logic switching applications |
Motorola |
| 1938 |
2N3961 |
NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz |
Motorola |
| 1939 |
2N398 |
PNP germanium transistor for high-voltage, audio-frequency applications |
Motorola |
| 1940 |
2N3980 |
Silicon annular PN unijunction transistor designed for military and industrial use in pulse, timing, sensing, and oscillator circuits |
Motorola |
| 1941 |
2N398A |
PNP germanium transistor for high-voltage, audio-frequency applications |
Motorola |
| 1942 |
2N4012 |
NPN silicon transistor designed for frequency-multiplication applications |
Motorola |
| 1943 |
2N4048 |
PNP germanium power transistor designed for high-current applications |
Motorola |
| 1944 |
2N4049 |
PNP germanium power transistor designed for high-current applications |
Motorola |
| 1945 |
2N4050 |
PNP germanium power transistor designed for high-current applications |
Motorola |
| 1946 |
2N4051 |
PNP germanium power transistor designed for high-current applications |
Motorola |
| 1947 |
2N4052 |
PNP germanium power transistor designed for high-current applications |
Motorola |
| 1948 |
2N4053 |
PNP germanium power transistor designed for high-current applications |
Motorola |
| 1949 |
2N4072 |
NPN silicon transistor designed as amplifiers and drivers for large-signal VHF and UHF applications |
Motorola |
| 1950 |
2N4073 |
NPN silicon transistor designed as amplifiers and drivers for large-signal VHF and UHF applications |
Motorola |
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