| No. |
Part Name |
Description |
Manufacturer |
| 1831 |
2N3495 |
PNP silicon annular Star transistor for high voltage switching and DC to VHF amplifier applications |
Motorola |
| 1832 |
2N3496 |
PNP silicon annular Star transistor for high voltage switching and DC to VHF amplifier applications |
Motorola |
| 1833 |
2N3497 |
PNP silicon annular Star transistor for high voltage switching and DC to VHF amplifier applications |
Motorola |
| 1834 |
2N3501CSM4 |
HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 1835 |
2N350A |
PNP germanium power transistor for economical power switching applications |
Motorola |
| 1836 |
2N3510 |
NPN silicon transistor for high-speed saturated switching applications to 500mA |
Motorola |
| 1837 |
2N3511 |
NPN silicon transistor for high-speed saturated switching applications to 500mA |
Motorola |
| 1838 |
2N3515 |
Dual NPN silicon transistor for use as a differential amplifier |
Motorola |
| 1839 |
2N3518 |
Dual NPN silicon transistor for use as a differential amplifier |
Motorola |
| 1840 |
2N351A |
PNP germanium power transistor for economical power switching applications |
Motorola |
| 1841 |
2N3544 |
NPN silicon transistor for VHF and UHF oscillator applications |
Motorola |
| 1842 |
2N3553 |
Silicon high frequency epitaxial planar transistor for VHF power stages, oscillators and driver stages |
AEG-TELEFUNKEN |
| 1843 |
2N3553 |
Silicon NPN overlay epitaxial planar transistor for VHF/UHF transmitting applications |
ICCE |
| 1844 |
2N3553 |
NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz |
Motorola |
| 1845 |
2N3553 |
Silicon NPN planar epitaxial transistor for transmitter applications at 175 MHz with 28 V supply voltage |
VALVO |
| 1846 |
2N3632 |
Silicon NPN epitaxial planar high frequency power transistor for VHF power stages, oscillators and driver stages |
AEG-TELEFUNKEN |
| 1847 |
2N3632 |
Silicon NPN overlay epitaxial planar transistor for VHF transmitting applications |
ICCE |
| 1848 |
2N3632 |
NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz |
Motorola |
| 1849 |
2N3632 |
Silicon Epitaxial Planar Overlay Transistor, intended for VHF transmitting |
Philips |
| 1850 |
2N3632 |
Silicon NPN planar epitaxial transistor for 175 MHz transmitters at 28 V supply voltage |
VALVO |
| 1851 |
2N3637CSM |
PNP SILICON TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 1852 |
2N3647 |
NPN silicon transistor for high-speed saturated switching applications to 500mA |
Motorola |
| 1853 |
2N3648 |
NPN silicon transistor for high-speed saturated switching applications to 500mA |
Motorola |
| 1854 |
2N3664 |
NPN silicon transistor for power amplifier and driver applications to 500MHz |
Motorola |
| 1855 |
2N3700DCSM |
HIGH VOLTAGE, MEDIUM POWER, NPN DUAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 1856 |
2N3713 |
NPN power transistor for medium-speed switching and amplifier applications |
National Semiconductor |
| 1857 |
2N3713 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 1858 |
2N3714 |
NPN power transistor for medium-speed switching and amplifier applications |
National Semiconductor |
| 1859 |
2N3714 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 1860 |
2N3715 |
NPN power transistor for medium-speed switching and amplifier applications |
National Semiconductor |
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