| No. |
Part Name |
Description |
Manufacturer |
| 1741 |
2N3046 |
Dual NPN silicon transistor designed for low-level, low-noise differential amplifier applications |
Motorola |
| 1742 |
2N3047 |
Dual NPN silicon transistor designed for low-level, low-noise differential amplifier applications |
Motorola |
| 1743 |
2N3048 |
Dual NPN silicon transistor designed for low-level, low-noise differential amplifier applications |
Motorola |
| 1744 |
2N3049 |
Dual PNP silicon transistor designed for low-level, low-noise differential amplifier applications |
Motorola |
| 1745 |
2N3050 |
Dual PNP silicon transistor designed for low-level, low-noise differential amplifier applications |
Motorola |
| 1746 |
2N3053 |
NPN silicon annular transistor designed for medium-current applications |
Motorola |
| 1747 |
2N3053 |
NPN Silicon Transistor for high level audio applications |
Newmarket Transistors NKT |
| 1748 |
2N3054 |
NPN Silicon Power Transistor for audio amplifiers and switching applications |
Newmarket Transistors NKT |
| 1749 |
2N3055 |
Silicon diffused mesa NPN power transistor for high power switching applications and AF amplifiers |
AEG-TELEFUNKEN |
| 1750 |
2N3055 |
Diffused NPN silicon LF power transistor with very good second-breakdown properties, for high-power LF power amplifiers, stabilization circuits and power switch applications |
ITT Semiconductors |
| 1751 |
2N3055 |
NPN Silicon Power Transistor for audio amplifiers and switching applications |
Newmarket Transistors NKT |
| 1752 |
2N3055 |
NPN TRANSISTOR FOR POWERFUL AF OUTPUT STAGES |
Siemens |
| 1753 |
2N3055H |
NPN silicon power transistor. 15Amp, 100V, 115Watt. These devices are designed for general purpose switching and amplifier applications. |
USHA India LTD |
| 1754 |
2N3114 |
NPN silicon transistor designed for high-voltage, low power video amplifier applications |
Motorola |
| 1755 |
2N3114CSM |
Bipolar NPN Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications |
SemeLAB |
| 1756 |
2N3118 |
Triple-diffused planar transistor of the silicon NPN type intended for use in RF amplifiers in military and industrial HF and VHF communication equipment |
RCA Solid State |
| 1757 |
2N3137 |
NPN silicon transistor for large signal VHF and UHF applications |
Motorola |
| 1758 |
2N3137 |
Epitaxial planar NPN transistor, designed for application as a Class-C, RF power amplifier |
SGS-ATES |
| 1759 |
2N319 |
PNP germanium transistor for audio amplifier and low-frequency switching applications |
Motorola |
| 1760 |
2N320 |
PNP germanium transistor for audio amplifier and low-frequency switching applications |
Motorola |
| 1761 |
2N3209CSM |
HIGH SPEED, PNP, SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 1762 |
2N321 |
PNP germanium transistor for audio amplifier and low-frequency switching applications |
Motorola |
| 1763 |
2N3210 |
NPN silicon high frequency switching transistor for industrial service |
Motorola |
| 1764 |
2N3211 |
NPN silicon high frequency switching transistor for industrial service |
Motorola |
| 1765 |
2N322 |
PNP germanium transistor for audio driver and low power output service in entertainment equipment |
Motorola |
| 1766 |
2N3227 |
NPN silicon annular transistor for low-current, high-speed switching applications |
Motorola |
| 1767 |
2N323 |
PNP germanium transistor for audio driver and low power output service in entertainment equipment |
Motorola |
| 1768 |
2N324 |
PNP germanium transistor for audio driver and low power output service in entertainment equipment |
Motorola |
| 1769 |
2N3252 |
NPN silicon transistor for high-current saturated switching and core driver applications |
Motorola |
| 1770 |
2N3253 |
NPN silicon transistor for high-current saturated switching and core driver applications |
Motorola |
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