DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for ,

Datasheets found :: 586373
Page: | 528 | 529 | 530 | 531 | 532 | 533 | 534 | 535 | 536 |
No. Part Name Description Manufacturer
15931 2N6402 Thyristor, 16 amperes, 200 volt Teccor Electronics
15932 2N6402 Thyristor, 16 amperes, 200 volt Teccor Electronics
15933 2N6403 SCRs 16 Ampere RMS, 400V Motorola
15934 2N6403 Thyristor, 16 amperes, 400 volt Teccor Electronics
15935 2N6403 Thyristor, 16 amperes, 400 volt Teccor Electronics
15936 2N6404 SCRs 16 Ampere RMS, 600V Motorola
15937 2N6404 Thyristor, 16 amperes, 600 volt Teccor Electronics
15938 2N6404 Thyristor, 16 amperes, 600 volt Teccor Electronics
15939 2N6405 SCRs 16 Ampere RMS, 800V Motorola
15940 2N6420 High-voltage, medium-power silicon P-N-P transistor. General Electric Solid State
15941 2N6421 High-voltage, medium-power silicon P-N-P transistor. General Electric Solid State
15942 2N6422 High-voltage, medium-power silicon P-N-P transistor. General Electric Solid State
15943 2N6423 High-voltage, medium-power silicon P-N-P transistor. General Electric Solid State
15944 2N6424 PNP transistor, 225V, 0.25A SemeLAB
15945 2N6424 PNP transistor, 225V, 0.25A SemeLAB
15946 2N6430 0.500W General Purpose NPN Metal Can Transistor. 200V Vceo, 0.050A Ic, 25 hFE. Continental Device India Limited
15947 2N6430 0.500W General Purpose NPN Metal Can Transistor. 200V Vceo, 0.050A Ic, 25 hFE. Continental Device India Limited
15948 2N6439 60 W, 225 to 400 MHz CONTROLLED �Q� BROADBAND RF POWER TRANSISTOR NPN SILICON Motorola
15949 2N6467 Silicon P-N-P medium-power transistor. -110V, 40W. General Electric Solid State
15950 2N6468 Silicon P-N-P medium-power transistor. -130V, 40W. General Electric Solid State
15951 2N6469 Epitaxial-base, silicon P-N-P high-power transistor. -50V, 125W. General Electric Solid State
15952 2N6469 Epitaxial-base, silicon P-N-P high-power transistor. -50V, 125W. General Electric Solid State
15953 2N6473 EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Boca Semiconductor Corporation
15954 2N6473 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 110V. General Electric Solid State
15955 2N6474 130 V, epitaxial-base NPN selicon versawatt transistor Boca Semiconductor Corporation
15956 2N6474 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 130V. General Electric Solid State
15957 2N6475 EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Boca Semiconductor Corporation
15958 2N6475 Epitaxial-base, silicon P-N-P VERSAWATT transistor. -110V. General Electric Solid State
15959 2N6476 Epitaxial-Base, Silicon N-P-N and P-N-P VERSAWATT Transistors Boca Semiconductor Corporation
15960 2N6476 Epitaxial-base, silicon P-N-P VERSAWATT transistor. -130V. General Electric Solid State


Datasheets found :: 586373
Page: | 528 | 529 | 530 | 531 | 532 | 533 | 534 | 535 | 536 |



© 2024 - www Datasheet Catalog com