No. |
Part Name |
Description |
Manufacturer |
15931 |
2N6402 |
Thyristor, 16 amperes, 200 volt |
Teccor Electronics |
15932 |
2N6402 |
Thyristor, 16 amperes, 200 volt |
Teccor Electronics |
15933 |
2N6403 |
SCRs 16 Ampere RMS, 400V |
Motorola |
15934 |
2N6403 |
Thyristor, 16 amperes, 400 volt |
Teccor Electronics |
15935 |
2N6403 |
Thyristor, 16 amperes, 400 volt |
Teccor Electronics |
15936 |
2N6404 |
SCRs 16 Ampere RMS, 600V |
Motorola |
15937 |
2N6404 |
Thyristor, 16 amperes, 600 volt |
Teccor Electronics |
15938 |
2N6404 |
Thyristor, 16 amperes, 600 volt |
Teccor Electronics |
15939 |
2N6405 |
SCRs 16 Ampere RMS, 800V |
Motorola |
15940 |
2N6420 |
High-voltage, medium-power silicon P-N-P transistor. |
General Electric Solid State |
15941 |
2N6421 |
High-voltage, medium-power silicon P-N-P transistor. |
General Electric Solid State |
15942 |
2N6422 |
High-voltage, medium-power silicon P-N-P transistor. |
General Electric Solid State |
15943 |
2N6423 |
High-voltage, medium-power silicon P-N-P transistor. |
General Electric Solid State |
15944 |
2N6424 |
PNP transistor, 225V, 0.25A |
SemeLAB |
15945 |
2N6424 |
PNP transistor, 225V, 0.25A |
SemeLAB |
15946 |
2N6430 |
0.500W General Purpose NPN Metal Can Transistor. 200V Vceo, 0.050A Ic, 25 hFE. |
Continental Device India Limited |
15947 |
2N6430 |
0.500W General Purpose NPN Metal Can Transistor. 200V Vceo, 0.050A Ic, 25 hFE. |
Continental Device India Limited |
15948 |
2N6439 |
60 W, 225 to 400 MHz CONTROLLED �Q� BROADBAND RF POWER TRANSISTOR NPN SILICON |
Motorola |
15949 |
2N6467 |
Silicon P-N-P medium-power transistor. -110V, 40W. |
General Electric Solid State |
15950 |
2N6468 |
Silicon P-N-P medium-power transistor. -130V, 40W. |
General Electric Solid State |
15951 |
2N6469 |
Epitaxial-base, silicon P-N-P high-power transistor. -50V, 125W. |
General Electric Solid State |
15952 |
2N6469 |
Epitaxial-base, silicon P-N-P high-power transistor. -50V, 125W. |
General Electric Solid State |
15953 |
2N6473 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
15954 |
2N6473 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 110V. |
General Electric Solid State |
15955 |
2N6474 |
130 V, epitaxial-base NPN selicon versawatt transistor |
Boca Semiconductor Corporation |
15956 |
2N6474 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 130V. |
General Electric Solid State |
15957 |
2N6475 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
15958 |
2N6475 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -110V. |
General Electric Solid State |
15959 |
2N6476 |
Epitaxial-Base, Silicon N-P-N and P-N-P VERSAWATT Transistors |
Boca Semiconductor Corporation |
15960 |
2N6476 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -130V. |
General Electric Solid State |
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