| No. |
Part Name |
Description |
Manufacturer |
| 16021 |
2N655 |
PNP Germanium transistor, for high-gain amplifier and switching service in the audio frequency range |
Motorola |
| 16022 |
2N6564 |
300 V, silicon controlled rectifier |
Boca Semiconductor Corporation |
| 16023 |
2N6565 |
400 V, silicon controlled rectifier |
Boca Semiconductor Corporation |
| 16024 |
2N6609 |
Silicon P-N-P epitaxial-base high-power transistor. -160V, 150W. |
General Electric Solid State |
| 16025 |
2N6618 |
NPN Silicon High Frequency Transistor, capable of MIL-S-19500 and MIL-STD-750/883 |
Motorola |
| 16026 |
2N6619 |
12 V, 30 mA, NPN silicon transistor for low-noise RF broadband amplifier and high-speed switching application |
Siemens |
| 16027 |
2N6619 |
12 V, 30 mA, NPN silicon transistor for low-noise RF broadband amplifier and high-speed switching application |
Siemens |
| 16028 |
2N6621 |
25 V, 25 mA, NPN silicon RF broadband transistor |
Siemens |
| 16029 |
2N6621 |
25 V, 25 mA, NPN silicon RF broadband transistor |
Siemens |
| 16030 |
2N665 |
Germanium PNP Power Transistor, TO-3 Package |
Silicon Transistor Corporation |
| 16031 |
2N6653 |
Silicon high power, high voltage switching NPN transistor - metal case |
IPRS Baneasa |
| 16032 |
2N6653/1 |
Silicon high power, high voltage switching NPN transistor - metal case |
IPRS Baneasa |
| 16033 |
2N6653/2 |
Silicon high power, high voltage switching NPN transistor - metal case |
IPRS Baneasa |
| 16034 |
2N6653/3 |
Silicon high power, high voltage switching NPN transistor - metal case |
IPRS Baneasa |
| 16035 |
2N6653/4 |
Silicon high power, high voltage switching NPN transistor - metal case |
IPRS Baneasa |
| 16036 |
2N6653A |
Silicon high power, high voltage switching NPN transistor - metal case |
IPRS Baneasa |
| 16037 |
2N6653B |
Silicon high power, high voltage switching NPN transistor - metal case |
IPRS Baneasa |
| 16038 |
2N6655 |
Silicon NPN, High Power, High Voltage Switching Transistor |
IPRS Baneasa |
| 16039 |
2N6655 |
Silicon NPN, High Power, High Voltage Switching Transistor |
IPRS Baneasa |
| 16040 |
2N6655A |
Silicon NPN, High Power, High Voltage Switching Transistor |
IPRS Baneasa |
| 16041 |
2N6655A |
Silicon NPN, High Power, High Voltage Switching Transistor |
IPRS Baneasa |
| 16042 |
2N6655B |
Silicon NPN, High Power, High Voltage Switching Transistor |
IPRS Baneasa |
| 16043 |
2N6655B |
Silicon NPN, High Power, High Voltage Switching Transistor |
IPRS Baneasa |
| 16044 |
2N6676 |
NPN silicon power transistor. 15 A, 300 V, 175 W. |
Motorola |
| 16045 |
2N6676 |
NPN silicon power transistor. 15 A, 300 V, 175 W. |
Motorola |
| 16046 |
2N6677 |
NPN silicon power transistor. 15 A, 350 V, 175 W. |
Motorola |
| 16047 |
2N6677 |
NPN silicon power transistor. 15 A, 350 V, 175 W. |
Motorola |
| 16048 |
2N6678 |
NPN silicon power transistor. 15 A, 400 V, 175 W. |
Motorola |
| 16049 |
2N6678 |
NPN silicon power transistor. 15 A, 400 V, 175 W. |
Motorola |
| 16050 |
2N6679 |
NPN Silicon High Frequency Transistor, capable of MIL-S-19500 and MIL-STD-750/883 |
Motorola |
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