| No. |
Part Name |
Description |
Manufacturer |
| 16111 |
2N689 |
Industrial-type, silicon controlled rectifier, case TO-48 |
Motorola |
| 16112 |
2N689 |
Industrial-type, silicon controlled rectifier, case TO-48 |
Motorola |
| 16113 |
2N6962 |
MOSPOWER N-Channel Enhancement Mode Transistor 100V 30A, Parametric limits in accordance with MIL-S-19500/568 where applicable |
Siliconix |
| 16114 |
2N697 |
0.600W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.500A Ic, 40 - 120 hFE. |
Continental Device India Limited |
| 16115 |
2N697 |
0.600W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.500A Ic, 40 - 120 hFE. |
Continental Device India Limited |
| 16116 |
2N699 |
0.800W General Purpose NPN Metal Can Transistor. 80V Vceo, 0.500A Ic, 40 - 120 hFE. |
Continental Device India Limited |
| 16117 |
2N699 |
0.800W General Purpose NPN Metal Can Transistor. 80V Vceo, 0.500A Ic, 40 - 120 hFE. |
Continental Device India Limited |
| 16118 |
2N700 |
PNP germanium mesa transistor for oscillator, frequency multiplier, wide-band mixer and wide-band amplifier applications |
Motorola |
| 16119 |
2N700 |
PNP germanium mesa transistor for oscillator, frequency multiplier, wide-band mixer and wide-band amplifier applications |
Motorola |
| 16120 |
2N7000 |
CASE 29-04, STYLE 22 TO-92 (TO-226AA) |
Motorola |
| 16121 |
2N7000 |
Small Signal MOSFET 200 mAmps, 60 Volts |
ON Semiconductor |
| 16122 |
2N7000 |
60 V, 5 ohm, N-channel enhancement-mode D-MOS power FET |
Topaz Semiconductor |
| 16123 |
2N7000 |
60 V, 5 ohm, N-channel enhancement-mode D-MOS power FET |
Topaz Semiconductor |
| 16124 |
2N7000 |
60 V, N-channel-enhancement |
TRANSYS Electronics Limited |
| 16125 |
2N7000-D |
Small Signal MOSFET 200 mAmps, 60 Volts N-Channel TO-92 |
ON Semiconductor |
| 16126 |
2N7000G |
Small Signal MOSFET 200 mAmps, 60 Volts |
ON Semiconductor |
| 16127 |
2N7000RLRA |
Small Signal MOSFET 200 mAmps, 60 Volts |
ON Semiconductor |
| 16128 |
2N7000RLRAG |
Small Signal MOSFET 200 mAmps, 60 Volts |
ON Semiconductor |
| 16129 |
2N7000RLRM |
Small Signal MOSFET 200 mAmps, 60 Volts |
ON Semiconductor |
| 16130 |
2N7000RLRMG |
Small Signal MOSFET 200 mAmps, 60 Volts |
ON Semiconductor |
| 16131 |
2N7000RLRP |
Small Signal MOSFET 200 mAmps, 60 Volts |
ON Semiconductor |
| 16132 |
2N7000RLRPG |
Small Signal MOSFET 200 mAmps, 60 Volts |
ON Semiconductor |
| 16133 |
2N7000ZL1G |
Small Signal MOSFET 200 mAmps, 60 Volts |
ON Semiconductor |
| 16134 |
2N7002 |
60 V, 300 mA N-channel Trench MOSFET |
Nexperia |
| 16135 |
2N7002 |
60 V, 300 mA N-channel Trench MOSFET |
NXP Semiconductors |
| 16136 |
2N7002 |
0.2W Power MOSFET, 60V Vdss, 0.115A Id, 7.5Om Rds |
SemiWell Semiconductor |
| 16137 |
2N7002 |
0.2W Power MOSFET, 60V Vdss, 0.115A Id, 7.5Om Rds |
SemiWell Semiconductor |
| 16138 |
2N7002 |
0.2W Power MOSFET, 60V Vdss, 0.115A Id, 7.5Om Rds |
SemiWell Semiconductor |
| 16139 |
2N7002-G |
MOSFET, VDS=60V, ID=0.25A, PD=350mW |
Comchip Technology |
| 16140 |
2N7002-G |
MOSFET, VDS=60V, ID=0.25A, PD=350mW |
Comchip Technology |
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