| No. |
Part Name |
Description |
Manufacturer |
| 16171 |
2N7002LT3 |
Small Signal MOSFET 115 mAmps, 60 Volts |
Leshan Radio Company |
| 16172 |
2N7002LT3 |
Small Signal MOSFET 115 mA, 60 Volts |
ON Semiconductor |
| 16173 |
2N7002LT3G |
Small Signal MOSFET 115 mA, 60 Volts |
ON Semiconductor |
| 16174 |
2N7002NXAK |
60 V, single N-channel Trench MOSFET |
Nexperia |
| 16175 |
2N7002NXBK |
60 V, N-channel Trench MOSFET |
Nexperia |
| 16176 |
2N7002P |
60 V, 360 mA N-channel Trench MOSFET |
Nexperia |
| 16177 |
2N7002P |
60 V, 360 mA N-channel Trench MOSFET |
NXP Semiconductors |
| 16178 |
2N7002PS |
60 V, 320 mA dual N-channel Trench MOSFET |
Nexperia |
| 16179 |
2N7002PS |
60 V, 320 mA dual N-channel Trench MOSFET |
NXP Semiconductors |
| 16180 |
2N7002PT |
60 V, 310 mA N-channel Trench MOSFET |
Nexperia |
| 16181 |
2N7002PT |
60 V, 310 mA N-channel Trench MOSFET |
NXP Semiconductors |
| 16182 |
2N7002PV |
60 V, 350 mA dual N-channel Trench MOSFET |
Nexperia |
| 16183 |
2N7002PV |
60 V, 350 mA dual N-channel Trench MOSFET |
NXP Semiconductors |
| 16184 |
2N7002PW |
60 V, 310 mA N-channel Trench MOSFET |
Nexperia |
| 16185 |
2N7002PW |
60 V, 310 mA N-channel Trench MOSFET |
NXP Semiconductors |
| 16186 |
2N700A |
PNP germanium mesa transistor for oscillator, frequency multiplier, wide-band mixer and wide-band amplifier applications |
Motorola |
| 16187 |
2N700A |
PNP germanium mesa transistor for oscillator, frequency multiplier, wide-band mixer and wide-band amplifier applications |
Motorola |
| 16188 |
2N702 |
NPN silicon annular transistor, TO-18 case |
Motorola |
| 16189 |
2N703 |
NPN silicon annular transistor, TO-18 case |
Motorola |
| 16190 |
2N706 |
Silicon Switching Transistor, for improved performance see ITT 2N2368 |
ITT Semiconductors |
| 16191 |
2N706 |
Silicon NPN transistor, fast switching |
SESCOSEM |
| 16192 |
2N706 |
Transistor, high speed saturated switches |
SGS-ATES |
| 16193 |
2N706A |
Silicon Switching Transistor, for improved performance see ITT 2N2368 |
ITT Semiconductors |
| 16194 |
2N706A |
Silicon NPN transistor, fast switching |
SESCOSEM |
| 16195 |
2N706A |
Transistor, high speed saturated switches |
SGS-ATES |
| 16196 |
2N706B |
Silicon Switching Transistor, for improved performance see ITT 2N2368 |
ITT Semiconductors |
| 16197 |
2N707 |
Transistor, RF-IF amplifiers/oscillators |
SGS-ATES |
| 16198 |
2N708 |
0.360W General Purpose NPN Metal Can Transistor. 15V Vceo, 0.200A Ic, 30 - 120 hFE. |
Continental Device India Limited |
| 16199 |
2N708 |
0.360W General Purpose NPN Metal Can Transistor. 15V Vceo, 0.200A Ic, 30 - 120 hFE. |
Continental Device India Limited |
| 16200 |
2N708 |
Silicon NPN transistor, fast switching |
SESCOSEM |
| | | |
