| No. |
Part Name |
Description |
Manufacturer |
| 16231 |
2N741 |
PNP germanium mesa transistor for oscillator, frequency multiplier and amplifier applications |
Motorola |
| 16232 |
2N741A |
PNP germanium mesa transistor for oscillator, frequency multiplier and amplifier applications |
Motorola |
| 16233 |
2N743 |
Silicon NPN transistor, fast switching |
SESCOSEM |
| 16234 |
2N743 |
Transistor, high speed saturated switches |
SGS-ATES |
| 16235 |
2N744 |
Silicon NPN transistor, fast switching |
SESCOSEM |
| 16236 |
2N744 |
Transistor, high speed saturated switches |
SGS-ATES |
| 16237 |
2N753 |
Silicon NPN transistor, fast switching |
SESCOSEM |
| 16238 |
2N753 |
Transistor, high speed saturated switches |
SGS-ATES |
| 16239 |
2N827 |
PNP germanium mesa transistor for high-speed switching applications, TO-18 case |
Motorola |
| 16240 |
2N834 |
Transistor, high speed saturated switches |
SGS-ATES |
| 16241 |
2N834A |
Transistor, high speed saturated switches |
SGS-ATES |
| 16242 |
2N869A |
PNP silicon annular low-power transistor designed for medium-speed, saturated switching applications |
Motorola |
| 16243 |
2N869A |
Transistor, high speed saturated switches |
SGS-ATES |
| 16244 |
2N914 |
Silicon NPN transistor, fast switching |
SESCOSEM |
| 16245 |
2N914 |
Transistor, high speed saturated switches |
SGS-ATES |
| 16246 |
2N915 |
Silicon NPN planar RF transistor for non-saturating switching circuits, RF amplifiers and oscillator circuits |
AEG-TELEFUNKEN |
| 16247 |
2N915 |
0.360W General Purpose NPN Metal Can Transistor. 50V Vceo, A Ic, 50 - 200 hFE. |
Continental Device India Limited |
| 16248 |
2N915 |
0.360W General Purpose NPN Metal Can Transistor. 50V Vceo, A Ic, 50 - 200 hFE. |
Continental Device India Limited |
| 16249 |
2N915 |
NPN silicon annular transistor for high-frequency amplifier, oscillator and switching applications |
Motorola |
| 16250 |
2N917 |
0.200W RF NPN Metal Can Transistor. 15V Vceo, 0.050A Ic, 20 - 200 hFE. |
Continental Device India Limited |
| 16251 |
2N917 |
0.200W RF NPN Metal Can Transistor. 15V Vceo, 0.050A Ic, 20 - 200 hFE. |
Continental Device India Limited |
| 16252 |
2N917 |
Silicon NPN transistor, VHF-UHF amplification and oscillation |
SESCOSEM |
| 16253 |
2N918 |
0.200W RF NPN Metal Can Transistor. 15V Vceo, 0.050A Ic, 20 hFE. |
Continental Device India Limited |
| 16254 |
2N918 |
0.200W RF NPN Metal Can Transistor. 15V Vceo, 0.050A Ic, 20 hFE. |
Continental Device India Limited |
| 16255 |
2N918 |
NPN silicon annular transistor with high reliability designed for use in VHF and UHF amplifier, mixer and oscillator applications |
Motorola |
| 16256 |
2N918 |
Silicon NPN transistor, VHF-UHF amplification and oscillation |
SESCOSEM |
| 16257 |
2N918 |
Transistor, RF-IF amplifiers/oscillators |
SGS-ATES |
| 16258 |
2N918CSM |
GENERAL PURPOSE, SMALL SIGNAL NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 16259 |
2N929 |
Silicon planar-epitaxial transistor, low frequency, low power NPN |
IPRS Baneasa |
| 16260 |
2N929 |
Silicon planar-epitaxial transistor, low frequency, low power NPN |
IPRS Baneasa |
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