| No. |
Part Name |
Description |
Manufacturer |
| 16321 |
2PD601BRL |
50 V, 200 mA NPN general-purpose transistors |
Nexperia |
| 16322 |
2PD601BRL |
50 V, 200 mA NPN general-purpose transistors |
NXP Semiconductors |
| 16323 |
2PD601BSL |
50 V, 200 mA NPN general-purpose transistors |
Nexperia |
| 16324 |
2PD601BSL |
50 V, 200 mA NPN general-purpose transistors |
NXP Semiconductors |
| 16325 |
2PD602AQL |
50 V, 500 mA NPN general-purpose transistors |
Nexperia |
| 16326 |
2PD602AQL |
50 V, 500 mA NPN general-purpose transistors |
NXP Semiconductors |
| 16327 |
2PD602ARL |
50 V, 500 mA NPN general-purpose transistors |
Nexperia |
| 16328 |
2PD602ARL |
50 V, 500 mA NPN general-purpose transistors |
NXP Semiconductors |
| 16329 |
2PD602ASL |
50 V, 500 mA NPN general-purpose transistors |
Nexperia |
| 16330 |
2PD602ASL |
50 V, 500 mA NPN general-purpose transistors |
NXP Semiconductors |
| 16331 |
2SA0699 |
Power Transistor - Silicon PNP Epitaxial Planar Type - Power Amplifier - Complementary Pair with 2SC1226, 2SC1226A |
Panasonic |
| 16332 |
2SA0699A |
Power Transistor - Silicon PNP Epitaxial Planar Type - Power Amplifier - Complementary Pair with 2SC1226, 2SC1226A |
Panasonic |
| 16333 |
2SA1007 |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
| 16334 |
2SA1007A |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
| 16335 |
2SA1011 |
High-Voltage Switching, AF Power Amp, 100W Output Predriver Applications |
SANYO |
| 16336 |
2SA1011 |
High-Voltage Switching, AF Power Amp, 100W Output Predriver Applications |
SANYO |
| 16337 |
2SA1013 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) COLOR TV VERT. DEFLECTION OUTPUT, COLOR TV CLASS B SOUND OUTPUT APPLICATIONS |
TOSHIBA |
| 16338 |
2SA1020 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER APPLICATIONS, POWER SWITCHING APPLICATIONS. |
TOSHIBA |
| 16339 |
2SA1060 |
Silicon PNP epitaxial base mesa transistor, 80V, 5A |
Panasonic |
| 16340 |
2SA1060 |
Silicon PNP epitaxial base mesa transistor, 80V, 5A |
Panasonic |
| 16341 |
2SA1091 |
Transistor Silicon PNP Triple Diffused Type (PCT process) High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications |
TOSHIBA |
| 16342 |
2SA1094 |
Silicon PNP epitaxial transistor, for power amplifier applications |
TOSHIBA |
| 16343 |
2SA1106 |
PNP PLANAR TRANSISTOR(AUDIO POWER AMPLIFIER, DC TO DC CONVERTER) |
Wing Shing Computer Components |
| 16344 |
2SA1120 |
Silicon PNP epitaxial transistor, strobo flash and audio power amplifier applications |
TOSHIBA |
| 16345 |
2SA1146 |
Silicon PNP epitaxial transistor, audio frequency, low power amplifier applications |
TOSHIBA |
| 16346 |
2SA1146 |
Silicon PNP epitaxial transistor, audio frequency, low power amplifier applications |
TOSHIBA |
| 16347 |
2SA1193 |
Silicon PNP Epitaxial, Darlington |
Hitachi Semiconductor |
| 16348 |
2SA1193K |
Silicon PNP Epitaxial, Darlington |
Hitachi Semiconductor |
| 16349 |
2SA12 |
Germanium PNP Alloyed Junction Transistor, intended for use in 455kHz intermediate frequency amplifier |
Hitachi Semiconductor |
| 16350 |
2SA1210 |
HIGH VOLTAGE SWITCHING, AF 150W PREDRIVER APPLICATIONS |
SANYO |
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