| No. |
Part Name |
Description |
Manufacturer |
| 16351 |
2SA1223 |
PNP silicon high frequency transistor (This datasheet of the NE88935 is also the datasheet of 2SA1223, see the Electrical Characteristics table) |
NEC |
| 16352 |
2SA1224 |
PNP medium power microwave transistor (This datasheet of the NE90115 is also the datasheet of 2SA1224, see the Electrical Characteristics table) |
NEC |
| 16353 |
2SA1225 |
Silicon PNP epitaxial power transistor, complementary 2SC2983 |
TOSHIBA |
| 16354 |
2SA1228 |
PNP silicon high frequency transistor (This datasheet of NE88912 is also the datasheet of 2SA1228, see the Electrical Characteristics table) |
NEC |
| 16355 |
2SA1235A |
200mW SMD PNP transistor, maximum rating: -50V Vceo, -200mA Ic, 150 to 500 hFE. Improve on 2SA1235 |
Isahaya Electronics Corporation |
| 16356 |
2SA1235A |
200mW SMD PNP transistor, maximum rating: -50V Vceo, -200mA Ic, 150 to 500 hFE. Improve on 2SA1235 |
Isahaya Electronics Corporation |
| 16357 |
2SA1235A |
200mW SMD PNP transistor, maximum rating: -50V Vceo, -200mA Ic, 150 to 500 hFE. Improve on 2SA1235 |
Isahaya Electronics Corporation |
| 16358 |
2SA1246 |
High-VEBO, AF Amp Applications |
SANYO |
| 16359 |
2SA1252 |
High VEBO, AF Amp Applications |
SANYO |
| 16360 |
2SA1253 |
High-hFE, AF Amp Applications |
SANYO |
| 16361 |
2SA1257 |
High-Voltage Switching, AF Power Amp, 100W Output Predriver Applications |
SANYO |
| 16362 |
2SA1257 |
High-Voltage Switching, AF Power Amp, 100W Output Predriver Applications |
SANYO |
| 16363 |
2SA1284 |
900mW Lead frame PNP transistor, maximum rating: -100V Vceo, -500mA Ic, 55 to 300 hFE. Complementary 2SC3244 |
Isahaya Electronics Corporation |
| 16364 |
2SA1284 |
900mW Lead frame PNP transistor, maximum rating: -100V Vceo, -500mA Ic, 55 to 300 hFE. Complementary 2SC3244 |
Isahaya Electronics Corporation |
| 16365 |
2SA1284 |
900mW Lead frame PNP transistor, maximum rating: -100V Vceo, -500mA Ic, 55 to 300 hFE. Complementary 2SC3244 |
Isahaya Electronics Corporation |
| 16366 |
2SA1286 |
SMALL TYPE MOTOR, PLUNGER DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 16367 |
2SA12H |
Germanium PNP Alloyed Junction Transistor, intended for use in 455kHz intermediate frequency amplifier |
Hitachi Semiconductor |
| 16368 |
2SA1302 |
Silicon PNP triple diffused power transistor, complementary 2SC3281 |
TOSHIBA |
| 16369 |
2SA1306B |
1.5 A; 200V; 20W; silicon PNP epitaxial type stransistor. For power amplifier applications, driver stage amplifier applications |
TOSHIBA |
| 16370 |
2SA1318R |
PNP transistor for AF amplifies applications, 60V, 0.2A |
SANYO |
| 16371 |
2SA1318R |
PNP transistor for AF amplifies applications, 60V, 0.2A |
SANYO |
| 16372 |
2SA1318S |
PNP transistor for AF amplifies applications, 60V, 0.2A |
SANYO |
| 16373 |
2SA1318S |
PNP transistor for AF amplifies applications, 60V, 0.2A |
SANYO |
| 16374 |
2SA1318T |
PNP transistor for AF amplifies applications, 60V, 0.2A |
SANYO |
| 16375 |
2SA1318T |
PNP transistor for AF amplifies applications, 60V, 0.2A |
SANYO |
| 16376 |
2SA1318U |
PNP transistor for AF amplifies applications, 60V, 0.2A |
SANYO |
| 16377 |
2SA1318U |
PNP transistor for AF amplifies applications, 60V, 0.2A |
SANYO |
| 16378 |
2SA1321 |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH VOLTAGE SWITCHING, COLOR TV CHROMA OUTPUT APPLICATIONS. |
TOSHIBA |
| 16379 |
2SA1363 |
500mW SMD PNP transistor, maximum rating: -16V Vceo, -2A Ic, 150 to 800 hFE. Complementary 2SC3443 |
Isahaya Electronics Corporation |
| 16380 |
2SA1363 |
500mW SMD PNP transistor, maximum rating: -16V Vceo, -2A Ic, 150 to 800 hFE. Complementary 2SC3443 |
Isahaya Electronics Corporation |
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