| No. |
Part Name |
Description |
Manufacturer |
| 1621 |
2N6499 |
5A high voltage NPN silicon 80W power transistor |
Motorola |
| 1622 |
2N6515 |
NPN Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
| 1623 |
2N6516 |
NPN Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
| 1624 |
2N6517 |
NPN Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
| 1625 |
2N6518 |
PNP Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
| 1626 |
2N6519 |
PNP Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
| 1627 |
2N6520 |
PNP Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
| 1628 |
2N653 |
PNP Germanium transistor, for high-gain amplifier and switching service in the audio frequency range |
Motorola |
| 1629 |
2N654 |
PNP Germanium transistor, for high-gain amplifier and switching service in the audio frequency range |
Motorola |
| 1630 |
2N655 |
PNP Germanium transistor, for high-gain amplifier and switching service in the audio frequency range |
Motorola |
| 1631 |
2N6603 |
NPN silicon high frequency transistor NF=2.0dB - 1GHz |
Motorola |
| 1632 |
2N6604 |
NPN silicon high frequency transistor NF=2.7dB - 1.0GHz |
Motorola |
| 1633 |
2N6609 |
Silicon P-N-P epitaxial-base high-power transistor. -160V, 150W. |
General Electric Solid State |
| 1634 |
2N6618 |
NPN Silicon High Frequency Transistor, capable of MIL-S-19500 and MIL-STD-750/883 |
Motorola |
| 1635 |
2N6619 |
12 V, 30 mA, NPN silicon transistor for low-noise RF broadband amplifier and high-speed switching application |
Siemens |
| 1636 |
2N6653 |
Silicon high power, high voltage switching NPN transistor - metal case |
IPRS Baneasa |
| 1637 |
2N6653 |
Silicon high power, high voltage switching NPN transistor - metal case |
IPRS Baneasa |
| 1638 |
2N6653 |
Silicon NPN High Power High Voltage Switching Transistor |
IPRS Baneasa |
| 1639 |
2N6653 |
Silicon NPN High Power High Voltage Switching Transistor |
IPRS Baneasa |
| 1640 |
2N6653/1 |
Silicon high power, high voltage switching NPN transistor - metal case |
IPRS Baneasa |
| 1641 |
2N6653/1 |
Silicon high power, high voltage switching NPN transistor - metal case |
IPRS Baneasa |
| 1642 |
2N6653/1 |
Silicon NPN High Power High Voltage Switching Transistor |
IPRS Baneasa |
| 1643 |
2N6653/1 |
Silicon NPN High Power High Voltage Switching Transistor |
IPRS Baneasa |
| 1644 |
2N6653/2 |
Silicon high power, high voltage switching NPN transistor - metal case |
IPRS Baneasa |
| 1645 |
2N6653/2 |
Silicon high power, high voltage switching NPN transistor - metal case |
IPRS Baneasa |
| 1646 |
2N6653/2 |
Silicon NPN High Power High Voltage Switching Transistor |
IPRS Baneasa |
| 1647 |
2N6653/2 |
Silicon NPN High Power High Voltage Switching Transistor |
IPRS Baneasa |
| 1648 |
2N6653/3 |
Silicon high power, high voltage switching NPN transistor - metal case |
IPRS Baneasa |
| 1649 |
2N6653/3 |
Silicon high power, high voltage switching NPN transistor - metal case |
IPRS Baneasa |
| 1650 |
2N6653/3 |
Silicon NPN High Power High Voltage Switching Transistor |
IPRS Baneasa |
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