| No. |
Part Name |
Description |
Manufacturer |
| 1741 |
2N706A |
NPN Silicon Planar Transistor for high speed switching and high frequency use |
Newmarket Transistors NKT |
| 1742 |
2N706A |
Transistor, high speed saturated switches |
SGS-ATES |
| 1743 |
2N706B |
NPN silicon annular switching transistor for high-speed switching applications |
Motorola |
| 1744 |
2N708 |
Silicon NPN epitaxial planar transistor for high speed switching and RF circuits |
AEG-TELEFUNKEN |
| 1745 |
2N708 |
NPN silicon annular transistor for high-speed switching applications |
Motorola |
| 1746 |
2N708 |
NPN Silicon Planar Transistor for high speed switching and high frequency use |
Newmarket Transistors NKT |
| 1747 |
2N708 |
NPN Silicon Planar Transistor for high speed switching and high frequency use |
Newmarket Transistors NKT |
| 1748 |
2N708 |
Transistor, high speed saturated switches |
SGS-ATES |
| 1749 |
2N709 |
NPN silicon epitaxial planar transistor, extremely fast switching and ultra high frequency applications |
ICCE |
| 1750 |
2N709 |
Transistor, high speed saturated switches |
SGS-ATES |
| 1751 |
2N709A |
NPN silicon epitaxial planar transistor, extremely fast switching and ultra high frequency applications |
ICCE |
| 1752 |
2N709A |
Transistor, high speed saturated switches |
SGS-ATES |
| 1753 |
2N711 |
PNP germanium mesa transistor for high-speed switching applications |
Motorola |
| 1754 |
2N711A |
Germanium High Frequency Transistor |
COSEM |
| 1755 |
2N711A |
PNP germanium mesa transistor for high-speed switching applications |
Motorola |
| 1756 |
2N711B |
PNP germanium mesa transistor for high-speed switching applications |
Motorola |
| 1757 |
2N718A |
NPN silicon annular Star transistor for high-speed switching and DC to UHF amplifier applications |
Motorola |
| 1758 |
2N721 |
PNP silicon annular transistor for high-frequency general-purpose amplifier applications |
Motorola |
| 1759 |
2N722 |
Transistor, high speed saturated switches |
SGS-ATES |
| 1760 |
2N7227 |
POWER MOS IV JEDEC REGISTERED N - CHANNEL HIGH VOLTAGE POWER MOSFETS 400 Volt 0.315 Ohm |
Advanced Power Technology |
| 1761 |
2N7228 |
POWER MOS IV JEDEC REGISTERED N - CHANNEL HIGH VOLTAGE POWER MOSFETS 500 Volt 0.415 Ohm |
Advanced Power Technology |
| 1762 |
2N7368JAN |
NPN HIGH POWER SILICON TRANSISTOR |
Microsemi |
| 1763 |
2N7368JANTX |
NPN HIGH POWER SILICON TRANSISTOR |
Microsemi |
| 1764 |
2N7368JANTXV |
NPN HIGH POWER SILICON TRANSISTOR |
Microsemi |
| 1765 |
2N7369JAN |
PNP HIGH POWER SILICON TRANSISTOR |
Microsemi |
| 1766 |
2N7369JANTX |
PNP HIGH POWER SILICON TRANSISTOR |
Microsemi |
| 1767 |
2N7369JANTXV |
PNP HIGH POWER SILICON TRANSISTOR |
Microsemi |
| 1768 |
2N743 |
Transistor, high speed saturated switches |
SGS-ATES |
| 1769 |
2N744 |
NPN silicon annular transistor for high-speed switching applications |
Motorola |
| 1770 |
2N744 |
Transistor, high speed saturated switches |
SGS-ATES |
| | | |
