| No. |
Part Name |
Description |
Manufacturer |
| 1831 |
2SA0838 |
Small-signal device - Small-signal transistor - High-Frequency Amplifiers and Others |
Panasonic |
| 1832 |
2SA1007 |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
| 1833 |
2SA1007 |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
| 1834 |
2SA1007A |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
| 1835 |
2SA1007A |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
| 1836 |
2SA1012 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. |
TOSHIBA |
| 1837 |
2SA1020 |
One Watt High Current PNP Transistor |
ON Semiconductor |
| 1838 |
2SA1022 |
Small-signal device - Small-signal transistor - High-Frequency Amplifiers and Others |
Panasonic |
| 1839 |
2SA1041 |
Silicon High Speed Power Transistor |
Fujitsu Microelectronics |
| 1840 |
2SA1042 |
Silicon High Speed Power Transistor |
Fujitsu Microelectronics |
| 1841 |
2SA1043 |
Silicon High Speed Power Transistor |
Fujitsu Microelectronics |
| 1842 |
2SA1044 |
Silicon High Speed Power Transistor |
Fujitsu Microelectronics |
| 1843 |
2SA1072 |
SILICON HIGH SPEED POWER TRANSISTOR |
Fujitsu Microelectronics |
| 1844 |
2SA1072A |
Silicon High Speed Power PNP Transistor |
Fujitsu Microelectronics |
| 1845 |
2SA1073 |
SILICON HIGH SPEED POWER TRANSISTOR |
Fujitsu Microelectronics |
| 1846 |
2SA1075 |
SILICON HIGH SPEED POWER TRANSISTOR |
Fujitsu Microelectronics |
| 1847 |
2SA1076 |
160V PNP silicon general purpose high speed power transistor |
Fujitsu Microelectronics |
| 1848 |
2SA1077 |
SILICON HIGH SPEED POWER TRANSISTOR |
Fujitsu Microelectronics |
| 1849 |
2SA1091 |
Transistor Silicon PNP Triple Diffused Type (PCT process) High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications |
TOSHIBA |
| 1850 |
2SA1125 |
Si PNP epitaxial planar. AF high voltage amplifier. |
Panasonic |
| 1851 |
2SA1195 |
Silicon PNP epitaxial high voltage transistor |
TOSHIBA |
| 1852 |
2SA1200 |
Transistor Silicon PNP Triple Diffused Type (PCT process) High Voltage Switching Applications |
TOSHIBA |
| 1853 |
2SA1209 |
160V/140mA High-Voltage Switching and AF 100W Predriver Applications |
SANYO |
| 1854 |
2SA1220 |
PNP silicon transistor for audio frequency and high frequency power amplifier applications |
NEC |
| 1855 |
2SA1220A |
PNP silicon transistor for audio frequency and high frequency power amplifier applications |
NEC |
| 1856 |
2SA1223 |
PNP silicon high frequency transistor (This datasheet of the NE88935 is also the datasheet of 2SA1223, see the Electrical Characteristics table) |
NEC |
| 1857 |
2SA1228 |
PNP silicon high frequency transistor (This datasheet of NE88912 is also the datasheet of 2SA1228, see the Electrical Characteristics table) |
NEC |
| 1858 |
2SA1244 |
Transistor Silicon PNP Epitaxial Type (PCT process) High Current Switching Applications |
TOSHIBA |
| 1859 |
2SA1245 |
Transistor Silicon PNP Epitaxial Planar Type High Frequency Amplifier and Switching Applications VHF~UHF Band Low Noise Amplifier Applications |
TOSHIBA |
| 1860 |
2SA1254 |
Small-signal device - Small-signal transistor - High-Frequency Amplifiers and Others |
Panasonic |
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