| No. |
Part Name |
Description |
Manufacturer |
| 1621 |
1PS89SS05 |
High-speed double diodes |
Philips |
| 1622 |
1PS89SS06 |
High-speed double diodes |
Philips |
| 1623 |
1R5DL41A |
High Efficiency Rectifier (HED) Switching Mode Power Supply Applications |
TOSHIBA |
| 1624 |
1R5JU41 |
HIGH SPEED RECTIFIER |
TOSHIBA |
| 1625 |
1RM100 |
High voltage silicon rectifiers (epoxy encapsulation) |
SESCOSEM |
| 1626 |
1RM120 |
High voltage silicon rectifiers (epoxy encapsulation) |
SESCOSEM |
| 1627 |
1RM150 |
High voltage silicon rectifiers (epoxy encapsulation) |
SESCOSEM |
| 1628 |
1RM200 |
High voltage silicon rectifiers (epoxy encapsulation) |
SESCOSEM |
| 1629 |
1RM250 |
High voltage silicon rectifiers (epoxy encapsulation) |
SESCOSEM |
| 1630 |
1RM40 |
High voltage silicon rectifiers (epoxy encapsulation) |
SESCOSEM |
| 1631 |
1RM60 |
High voltage silicon rectifiers (epoxy encapsulation) |
SESCOSEM |
| 1632 |
1RM80 |
High voltage silicon rectifiers (epoxy encapsulation) |
SESCOSEM |
| 1633 |
1S1219H |
Silicon Epitaxial Planar Diode, used for High Speed Switching |
Hitachi Semiconductor |
| 1634 |
1S1220H |
Silicon Epitaxial Planar Diode, used for High Speed Switching |
Hitachi Semiconductor |
| 1635 |
1S1832 |
Rectifier Silicon Diffused Type High Speed Rectifier Applications (fast recovery) |
TOSHIBA |
| 1636 |
1S1834 |
Rectifier Silicon Diffused Type High Speed Rectifier Applications (fast recovery) |
TOSHIBA |
| 1637 |
1S1835 |
Rectifier Silicon Diffused Type High Speed Rectifier Applications (fast recovery) |
TOSHIBA |
| 1638 |
1S1837 |
Silicon diffused junction rectifier, High Voltage Rectifier for Color Television Receivers Application (Doubler Circuits) |
TOSHIBA |
| 1639 |
1S1838 |
Silicon diffused junction high voltage rectifier 45kV 1A |
TOSHIBA |
| 1640 |
1S2074 |
Silicon Epitaxial Planar Diode for High Speed Switching |
Hitachi Semiconductor |
| 1641 |
1S2074H |
Silicon Epitaxial Planar Diode for High Speed Switching |
Hitachi Semiconductor |
| 1642 |
1S2074H |
Silicon Epitaxial Plana Diode, intended for use in High Speed Switching |
Hitachi Semiconductor |
| 1643 |
1S2075 |
Silicon Epitaxial Planar Diode for High Speed Switching |
Hitachi Semiconductor |
| 1644 |
1S2075K |
Silicon Epitaxial Planar Diode for High Speed Switching |
Hitachi Semiconductor |
| 1645 |
1S2237B |
Silicon diffused junction high-voltage rectifier, 18kV |
TOSHIBA |
| 1646 |
1S77H |
Germanium Gold Bond Diode, intended for use in High Transfer Medium Speed Switching |
Hitachi Semiconductor |
| 1647 |
1S78H |
Germanium Gold Bond Diode, intended for use in High Transfer Medium Speed Switching |
Hitachi Semiconductor |
| 1648 |
1S79H |
Germanium Gold Bond Diode, intended for use in High Transfer Medium Speed Switching |
Hitachi Semiconductor |
| 1649 |
1S84H |
Silicon Diffused for High Voltage Switching |
Hitachi Semiconductor |
| 1650 |
1S920 |
Glass passivated silicon diode with high-break-off voltage for general purpoe application |
Texas Instruments |
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