| No. |
Part Name |
Description |
Manufacturer |
| 1651 |
1S920 |
Glass passivated silicon diode with high breaking voltage |
Texas Instruments |
| 1652 |
1S921 |
Glass passivated silicon diode with high-break-off voltage for general purpoe application |
Texas Instruments |
| 1653 |
1S921 |
Glass passivated silicon diode with high breaking voltage |
Texas Instruments |
| 1654 |
1S922 |
Glass passivated silicon diode with high-break-off voltage for general purpoe application |
Texas Instruments |
| 1655 |
1S922 |
Glass passivated silicon diode with high breaking voltage |
Texas Instruments |
| 1656 |
1S922TR |
High Conductance Fast Diode |
Fairchild Semiconductor |
| 1657 |
1S923 |
Glass passivated silicon diode with high-break-off voltage for general purpoe application |
Texas Instruments |
| 1658 |
1S923 |
Glass passivated silicon diode with high breaking voltage |
Texas Instruments |
| 1659 |
1S923TR |
High Conductance Fast Diode |
Fairchild Semiconductor |
| 1660 |
1SS108 |
Silicon Schottky Barrier Diode for Various Detector/ High Speed Switching |
Hitachi Semiconductor |
| 1661 |
1SS118 |
Silicon Epitaxial Planar Diode for High Speed Switching |
Hitachi Semiconductor |
| 1662 |
1SS181 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 1663 |
1SS184 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 1664 |
1SS187 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 1665 |
1SS190 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 1666 |
1SS193 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 1667 |
1SS196 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 1668 |
1SS199 |
Silicon Schottky Barrier Diode for Various Detector/ High Speed Switching |
Hitachi Semiconductor |
| 1669 |
1SS199MHD |
Silicon Schottky Barrier Diode for Various Detector/ High Speed Switching |
Hitachi Semiconductor |
| 1670 |
1SS200 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 1671 |
1SS201 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 1672 |
1SS226 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 1673 |
1SS250 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 1674 |
1SS272 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 1675 |
1SS293 |
Diode Silicon Epitaxial Schottoky Barrier Type Low Voltage High Speed Switching |
TOSHIBA |
| 1676 |
1SS294 |
Diode Silicon Epitaxial Schottoky Barrier Type Low Voltage High Speed Switching |
TOSHIBA |
| 1677 |
1SS300 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Applications |
TOSHIBA |
| 1678 |
1SS301 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Applications |
TOSHIBA |
| 1679 |
1SS302 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Applications |
TOSHIBA |
| 1680 |
1SS306 |
Diode Silicon Epitaxial Planar Type High Voltage,High Speed Switching Applications |
TOSHIBA |
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