| No. |
Part Name |
Description |
Manufacturer |
| 1651 |
2SA235 |
Germanium Transistor PNP MESA, intended for use in FM RF Amplifier, Frequency Converter |
Hitachi Semiconductor |
| 1652 |
2SA350 |
Germanium PNP Transistor Drift Junction, intended for use in SW RF Amplifier, Oscillator, FM IF Amplifier |
Hitachi Semiconductor |
| 1653 |
2SA350 |
Germanium PNP Transistor Drift Junction, intended for use in SW RF Amplifier, Oscillator, FM IF Amplifier |
Hitachi Semiconductor |
| 1654 |
2SA353 |
Germanium PNP Transistor Drift Junction, intended for use in 455kHz Intermediate Frequency Amplifier |
Hitachi Semiconductor |
| 1655 |
2SA355 |
Germanium PNP Transistor Drift Junction, intended for use in MW RF Amplifier |
Hitachi Semiconductor |
| 1656 |
2SA473 |
PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) |
Wing Shing Computer Components |
| 1657 |
2SA493-GR |
PNP transistor for low noise audio amplifier applications |
TOSHIBA |
| 1658 |
2SA493-Y |
PNP transistor for low noise audio amplifier applications |
TOSHIBA |
| 1659 |
2SA493G |
Silicon PNP epitaxial planar transistor for Low Noise Audio Amplifier Applications |
TOSHIBA |
| 1660 |
2SA494 |
Silicon PNP epitaxial planar transistor for Low Noise Audio Amplifier Applications |
TOSHIBA |
| 1661 |
2SA495 |
Silicon PNP epitaxial planar transistor for General Amplifier Applications fT=200MHz, complementary to 2SC372 |
TOSHIBA |
| 1662 |
2SA495G |
Silicon PNP epitaxial planar transistor, high frequency amplifier and high speed switching applications |
TOSHIBA |
| 1663 |
2SA497 |
PNP transistor for medium power amplifier applications |
TOSHIBA |
| 1664 |
2SA498 |
PNP transistor for medium power amplifier applications |
TOSHIBA |
| 1665 |
2SA499 |
Silicon PNP epitaxial planar transistor, high frequency amplifier and high speed switching applications |
TOSHIBA |
| 1666 |
2SA500 |
Silicon PNP epitaxial planar transistor, high frequency amplifier and high speed switching applications |
TOSHIBA |
| 1667 |
2SA532 |
Medium Power Amplifiers and Switches |
Micro Electronics |
| 1668 |
2SA539 |
Low frequency amplifier. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 400mW. |
USHA India LTD |
| 1669 |
2SA542 |
Low frequency amplifier. Collector-base voltage: Vcbo = -30V. Collector-emitter voltage: Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 250mW. |
USHA India LTD |
| 1670 |
2SA548H |
Silicon PNP Epitaxial Planar Transistor, intended for use in Medium Speed Switching, RF Amplifier |
Hitachi Semiconductor |
| 1671 |
2SA562TM |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications |
TOSHIBA |
| 1672 |
2SA562TM |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications |
TOSHIBA |
| 1673 |
2SA564 |
Low Level and General Purpose Amplifiers |
Micro Electronics |
| 1674 |
2SA608 |
Low-Frequency General-Purpose Amplifier Applications |
SANYO |
| 1675 |
2SA608N |
PNP Epitaxial Planar Silicon Transistors Low-Frequency General-Purpose Amplifier Applications |
SANYO |
| 1676 |
2SA640 |
PNP silicon transistor designed for use in AF low noise amplifier of STEREOSET, RADIO and TAPE RECORDER |
NEC |
| 1677 |
2SA642 |
LOW FREQUENCY POWER AMPLIFIER |
USHA India LTD |
| 1678 |
2SA643 |
Transistors LOW FREQUENCY POWER AMPLIFIER |
USHA India LTD |
| 1679 |
2SA671 |
PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) |
Wing Shing Computer Components |
| 1680 |
2SA673 |
Transistors>Amplifiers/Bipolar |
Renesas |
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