No. |
Part Name |
Description |
Manufacturer |
1741 |
2SB1018A |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. |
TOSHIBA |
1742 |
2SB1025 |
Transistors>Amplifiers/Bipolar |
Renesas |
1743 |
2SB1026 |
Transistors>Amplifiers/Bipolar |
Renesas |
1744 |
2SB1028 |
Transistors>Amplifiers/Bipolar |
Renesas |
1745 |
2SB1031 |
SILICON NPN EPITAXIAL LOW FREQUENCY POWER AMPLIFIER HIGH CURRENT SWITCHING |
Hitachi Semiconductor |
1746 |
2SB1031K |
LOW FREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR WITH 2SD1435K |
Hitachi Semiconductor |
1747 |
2SB1033 |
PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) |
Wing Shing Computer Components |
1748 |
2SB1046 |
LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SD1464 |
Hitachi Semiconductor |
1749 |
2SB1056 |
SI NPN TRIPLE DIFFUSED PLANAR HIGH POWER AMPLIFIER |
Panasonic |
1750 |
2SB1057 |
SI NPN TRIPLE DIFFUSED PLANAR HIGH POWER AMPLIFIER |
Panasonic |
1751 |
2SB1058 |
LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SD1489 |
Hitachi Semiconductor |
1752 |
2SB1059 |
Transistors>Amplifiers/Bipolar |
Renesas |
1753 |
2SB1061 |
Silicon PNP Triple Diffused Low Frequency Power Amplifier |
Hitachi Semiconductor |
1754 |
2SB1067 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (DARLINGTON POWER) MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. SWITCHING APPLICATIONS, POWER AMPLIFIER APPLICATIONS. |
TOSHIBA |
1755 |
2SB1077 |
LOW FREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR WITH 2SD1558 |
Hitachi Semiconductor |
1756 |
2SB1101 |
LOW FREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR WITH 2SD1601,2SD1602 |
Hitachi Semiconductor |
1757 |
2SB1102 |
LOW FREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR WITH 2SD1601,2SD1602 |
Hitachi Semiconductor |
1758 |
2SB1109 |
SILICON PNP EPITAXIAL (LOW FREQUENCY HIGH VOLTAGE AMPLIFIER) |
Hitachi Semiconductor |
1759 |
2SB1110 |
SILICON PNP EPITAXIAL (LOW FREQUENCY HIGH VOLTAGE AMPLIFIER) |
Hitachi Semiconductor |
1760 |
2SB1116 |
Audio frequency power amplifier medium speed switching. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -50V. Emitter-base voltage Vebo = -6V. Collector dissipation: Pc(max) = 0,75W. |
USHA India LTD |
1761 |
2SB1116A |
Audio frequency power amplifier medium speed switching. Collector-base voltage Vcbo = -80V. Collector-emitter voltage Vceo = -60V. Emitter-base voltage Vebo = -6V. Collector dissipation Pc(max) = 0,75W. |
USHA India LTD |
1762 |
2SB1118 |
Low-Voltage High-Current Amplifier, Muting Applications |
SANYO |
1763 |
2SB1119 |
LF Amplifier, Electronic Governor Applications |
SANYO |
1764 |
2SB1122 |
PNP Epitaxial Planar Silicon Transistors Low-Frequency Power Amplifier Applications |
SANYO |
1765 |
2SB1133 |
PNP EPITAXIAL SILICON TRANSISTOR(POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT) |
Wing Shing Computer Components |
1766 |
2SB1163 |
SI NPN TRIPLE DIFFUSED PLANAR HIGH POWER AMPLIFIER |
Unknow |
1767 |
2SB1173 |
AF Power Amplifier Complementary Pair with 2SD1743, 2SD1743A |
Panasonic |
1768 |
2SB1173A |
AF Power Amplifier Complementary Pair with 2SD1743, 2SD1743A |
Panasonic |
1769 |
2SB1244 |
LOW FREQUENCY HIGH VOLTAGE AMPLIFIER |
Hitachi Semiconductor |
1770 |
2SB1245 |
LOW FREQUENCY HIGH VOLTAGE AMPLIFIER |
Hitachi Semiconductor |
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