| No. |
Part Name |
Description |
Manufacturer |
| 1651 |
2SA1981 |
PNP Silicon Transistor (Audio power amplifier application) |
AUK Corp |
| 1652 |
2SA1981S |
PNP Silicon Transistor (Audio power amplifier application) |
AUK Corp |
| 1653 |
2SA1981SF |
PNP Silicon Transistor (Audio power amplifier application) |
AUK Corp |
| 1654 |
2SA1986 |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 1655 |
2SA1987 |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 1656 |
2SA1988 |
PNP SILICON TRANSISTOR POWER AMPLIFIER INDUSTRIAL USE |
NEC |
| 1657 |
2SA2029M3 |
PNP General Purpose Amplifier Transistor |
ON Semiconductor |
| 1658 |
2SA2063 |
General-Purpose Amplifier Transistors |
SANYO |
| 1659 |
2SA2080 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 1660 |
2SA2081 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 1661 |
2SA2164 |
Small-signal device - Small-signal transistor - High-Frequency Amplifiers and Others |
Panasonic |
| 1662 |
2SA234 |
Germanium Transistor PNP MESA, intended for use in FM Intermediate Frequency Amplifier, SW Frequency Converter |
Hitachi Semiconductor |
| 1663 |
2SA235 |
Germanium Transistor PNP MESA, intended for use in FM RF Amplifier, Frequency Converter |
Hitachi Semiconductor |
| 1664 |
2SA3331R |
NPN transistor for AF amplifies applications, 60V, 0.2A |
SANYO |
| 1665 |
2SA3331S |
NPN transistor for AF amplifies applications, 60V, 0.2A |
SANYO |
| 1666 |
2SA3331T |
NPN transistor for AF amplifies applications, 60V, 0.2A |
SANYO |
| 1667 |
2SA3331U |
NPN transistor for AF amplifies applications, 60V, 0.2A |
SANYO |
| 1668 |
2SA3331V |
NPN transistor for AF amplifies applications, 60V, 0.2A |
SANYO |
| 1669 |
2SA350 |
Germanium PNP Transistor Drift Junction, intended for use in SW RF Amplifier, Oscillator, FM IF Amplifier |
Hitachi Semiconductor |
| 1670 |
2SA350 |
Germanium PNP Transistor Drift Junction, intended for use in SW RF Amplifier, Oscillator, FM IF Amplifier |
Hitachi Semiconductor |
| 1671 |
2SA353 |
Germanium PNP Transistor Drift Junction, intended for use in 455kHz Intermediate Frequency Amplifier |
Hitachi Semiconductor |
| 1672 |
2SA355 |
Germanium PNP Transistor Drift Junction, intended for use in MW RF Amplifier |
Hitachi Semiconductor |
| 1673 |
2SA473 |
PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) |
Wing Shing Computer Components |
| 1674 |
2SA493-GR |
PNP transistor for low noise audio amplifier applications |
TOSHIBA |
| 1675 |
2SA493-Y |
PNP transistor for low noise audio amplifier applications |
TOSHIBA |
| 1676 |
2SA493G |
Silicon PNP epitaxial planar transistor for Low Noise Audio Amplifier Applications |
TOSHIBA |
| 1677 |
2SA494 |
Silicon PNP epitaxial planar transistor for Low Noise Audio Amplifier Applications |
TOSHIBA |
| 1678 |
2SA495 |
Silicon PNP epitaxial planar transistor for General Amplifier Applications fT=200MHz, complementary to 2SC372 |
TOSHIBA |
| 1679 |
2SA495G |
Silicon PNP epitaxial planar transistor, high frequency amplifier and high speed switching applications |
TOSHIBA |
| 1680 |
2SA497 |
PNP transistor for medium power amplifier applications |
TOSHIBA |
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