| No. |
Part Name |
Description |
Manufacturer |
| 1711 |
2SA733 |
Low frequency amplifier. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -50V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 250mW. |
USHA India LTD |
| 1712 |
2SA733P |
PNP transistor for use in driver of AF amplifier, 60V, 0.1A |
NEC |
| 1713 |
2SA733Q |
PNP transistor for use in driver of AF amplifier, 60V, 0.1A |
NEC |
| 1714 |
2SA733R |
PNP transistor for use in driver of AF amplifier, 60V, 0.1A |
NEC |
| 1715 |
2SA750 |
PNP silicon transistor designed for use in AF low noise amplifier of high-class STEREOSET, RADIO and TAPERECORDER |
NEC |
| 1716 |
2SA763 |
PNP silicon transistor for low noise audio amplifier applications |
TOSHIBA |
| 1717 |
2SA769 |
PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) |
Wing Shing Computer Components |
| 1718 |
2SA781 |
SILICON PNP EPITAXIAL HIGH FREQUNCY AMPLIFIER |
Hitachi Semiconductor |
| 1719 |
2SA781K |
SILICON PNP EPITAXIAL HIGH FREQUNCY AMPLIFIER |
Hitachi Semiconductor |
| 1720 |
2SA811 |
Audio frequency high gain amplifier PNP silicon epitaxial transistor |
NEC |
| 1721 |
2SA811A |
AUDIO FREQUENCY HIGH GAIN AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 1722 |
2SA812 |
AUDIO FREQUENCY,GENERAL PURPOSE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 1723 |
2SA817 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier Applications |
TOSHIBA |
| 1724 |
2SA817A |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) DRIVER STAGE AMPLIFIER APPLICATIONS VOLTAGE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 1725 |
2SA817A |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) DRIVER STAGE AMPLIFIER APPLICATIONS VOLTAGE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 1726 |
2SA836 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 1727 |
2SA838 |
Small-signal device - Small-signal transistor - High-Frequency Amplifiers and Others |
Panasonic |
| 1728 |
2SA844 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 1729 |
2SA872 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 1730 |
2SA872A |
Transistors>Amplifiers/Bipolar |
Renesas |
| 1731 |
2SA893 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 1732 |
2SA893A |
Transistors>Amplifiers/Bipolar |
Renesas |
| 1733 |
2SA9012 |
1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH PULL OPERATION |
USHA India LTD |
| 1734 |
2SA9015 |
LOW FREQUENCY LOW NOISE AMPLIFIER |
USHA India LTD |
| 1735 |
2SA928A |
PNP transistor for audio power amplifier, collector-emitter voltage=30V, collector current =2A |
Unisonic Technologies |
| 1736 |
2SA940 |
PNP EPITAXIAL SILICON TRANSISTOR(POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT) |
Wing Shing Computer Components |
| 1737 |
2SA940A |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) POWER AMPLIFIER AND VERTICAL OUTPUT APPLICATIONS. |
TOSHIBA |
| 1738 |
2SA941 |
120V PNP silicon transistor for low noise audio amplifier applications |
TOSHIBA |
| 1739 |
2SA942 |
90V PNP silicon transistor for low noise audio amplifier applications |
TOSHIBA |
| 1740 |
2SA949 |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE. DRIVER STAGE AUDIO AMPLIFIER AND HIGH VOLTAGE SWITCHING APPLICATIONS |
TOSHIBA |
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