| No. |
Part Name |
Description |
Manufacturer |
| 1831 |
2SB440 |
Germanium PNP alloy junction transistor, low noise amplifier applications |
TOSHIBA |
| 1832 |
2SB459 |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
| 1833 |
2SB460 |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
| 1834 |
2SB461 |
Germanium PNP alloy junction transistor, audio medium power amplifier, strobo flash applications |
TOSHIBA |
| 1835 |
2SB502 |
Silicon PNP epitaxial MESA transistor, audio power amplifier, regulator applications |
TOSHIBA |
| 1836 |
2SB503 |
Silicon PNP epitaxial MESA transistor, audio power amplifier, regulator applications |
TOSHIBA |
| 1837 |
2SB507 |
PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) |
Wing Shing Computer Components |
| 1838 |
2SB507D |
PLANAR TYPE SILICON TRANSISTOR FOR AF POWER AMPLIFIER USE |
SANYO |
| 1839 |
2SB508 |
PLANAR TYPE SILICON TRANSISTOR FOR AF POWER AMPLIFIER USE |
SANYO |
| 1840 |
2SB509 |
For AF Power Amplifier Use |
Unknow |
| 1841 |
2SB514 |
PNP Triple Diffused Planar Silicon Transistors 50V/2A Low-Frequency Power Amplifier Applications |
SANYO |
| 1842 |
2SB536 |
Audio Frequency power amplifier and low speed switching silicon epitaxial transistor |
NEC |
| 1843 |
2SB536 |
Audio Frequency Power Amplifier,Low Speed Switching |
Unknow |
| 1844 |
2SB537 |
Audio Frequency power amplifier and low speed switching silicon epitaxial transistor |
NEC |
| 1845 |
2SB537 |
Audio Frequency Power Amplifier,Low Speed Switching |
Unknow |
| 1846 |
2SB539A |
Audio frequency power amplifier silicon triple diffused MESA transistor |
NEC |
| 1847 |
2SB539B |
Audio frequency power amplifier silicon triple diffused MESA transistor |
NEC |
| 1848 |
2SB539C |
Audio frequency power amplifier silicon triple diffused MESA transistor |
NEC |
| 1849 |
2SB541 |
Audio frequency power amplifier PNP/NPN silicon triple diffused MESA transistor |
NEC |
| 1850 |
2SB548 |
PNP/NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS |
NEC |
| 1851 |
2SB548 |
Audio Frequency Power Amplifier |
Unknow |
| 1852 |
2SB554 |
Power Amplifier Applications |
TOSHIBA |
| 1853 |
2SB56 |
Germanium PNP alloy junction transistor, audio low power amplifier applications |
TOSHIBA |
| 1854 |
2SB561 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 1855 |
2SB562 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 1856 |
2SB564A |
Audio frequency power amplifier. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 800mW. Collector current Ic = -1.0A. |
USHA India LTD |
| 1857 |
2SB595 |
Silicon PNP triple diffused power amplifier |
TOSHIBA |
| 1858 |
2SB595 |
LOW FREQUENCY POWER AMPLIFIER(PNP EPITAXUAL) |
Wing Shing Computer Components |
| 1859 |
2SB596 |
PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) |
Wing Shing Computer Components |
| 1860 |
2SB600 |
Audio frequency power amplifier silicon triple diffused transistor |
NEC |
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