| No. |
Part Name |
Description |
Manufacturer |
| 16771 |
2SC1213D |
NPN transistor for Low frequency amplifier, 50V, 500mA |
Hitachi Semiconductor |
| 16772 |
2SC1213D |
NPN transistor for low frequency amplifier, 50V, 500mA |
Renesas |
| 16773 |
2SC1213D |
NPN transistor for low frequency amplifier, 50V, 500mA |
Renesas |
| 16774 |
2SC1241 |
Silicon NPN epitaxial planar RF transistor, fT=400MHz |
TOSHIBA |
| 16775 |
2SC1252 |
NPN medium power UHF-VHF transistor (This datasheet of NE74114 is also the datasheet of 2SC1252, see the Electrical Characteristics table) |
NEC |
| 16776 |
2SC1260 |
NPN silicon microwave transistor (This datasheet of NE87112 is also the datasheet of 2SC1260, see the Electrical Characteristics table) |
NEC |
| 16777 |
2SC1321 |
NPN silicon epitaxial transistor, UHF amplifier |
NEC |
| 16778 |
2SC1325A |
NPN silicon triple diffused MESA transistor, horizontal deflection output for color TV |
NEC |
| 16779 |
2SC1358 |
NPN silicon triple diffused MESA transistor, horizontal deflection output for color TV |
NEC |
| 16780 |
2SC1365 |
NPN medium power UHF-VHF transistor (This datasheet of NE74113 is also the datasheet of 2SC1365, see the Electrical Characteristics table) |
NEC |
| 16781 |
2SC1377 |
Silicon NPN epitaxial planar transistor, 27MHz, SSB, AM power amplifier applications |
TOSHIBA |
| 16782 |
2SC1377 |
Silicon NPN epitaxial planar transistor, 27MHz, SSB, AM power amplifier applications |
TOSHIBA |
| 16783 |
2SC1377 |
Silicon NPN epitaxial planar transistor, 27MHz, SSB, AM power amplifier applications |
TOSHIBA |
| 16784 |
2SC1380 |
Silicon NPN epitaxial planar high-frequency, low-noise transistor |
TOSHIBA |
| 16785 |
2SC1380A |
Silicon NPN epitaxial planar high-frequency, low-noise transistor |
TOSHIBA |
| 16786 |
2SC1399 |
NPN silicon transistor, designed for use in driver stage of AF amplifier and low speed switching |
NEC |
| 16787 |
2SC1424 |
Marking for NE73412 part number, 12 NEC (TO-72) package |
NEC |
| 16788 |
2SC1424 |
NPN silicon general purpose transistor (This datasheet of the NE73412 is also the datasheet of 2SC1424, see the Electrical Characteristics table) |
NEC |
| 16789 |
2SC1426 |
NPN medium power UHF-VHF transistor (This datasheet of NE416 series is also the datasheet of 2SC1426, see the Electrical Characteristics table) |
NEC |
| 16790 |
2SC1433 |
Silicon NPN triple diffused MESA transistor, high voltage switching applications |
TOSHIBA |
| 16791 |
2SC1434 |
Silicon NPN triple diffused MESA transistor, high voltage switching applicatio |
TOSHIBA |
| 16792 |
2SC1435 |
Silicon NPN triple diffused MESA transistor, high voltage switching applicatio |
TOSHIBA |
| 16793 |
2SC1472 |
Silicon NPN Epitaxial, Darlington |
Hitachi Semiconductor |
| 16794 |
2SC1472K |
Silicon NPN Epitaxial, Darlington |
Hitachi Semiconductor |
| 16795 |
2SC1475 |
SPECIFICATION TRANSISTORS, DIODES |
Unknow |
| 16796 |
2SC1506 |
NPN silicon triple diffused transistor, color TV chroma and sound output amplifiers |
NEC |
| 16797 |
2SC1507 |
NPN silicon triple diffused transistor, color TV chroma and sound output amplifiers |
NEC |
| 16798 |
2SC150T |
Silicon NPN Transistor Low Temperature Passivation, intended for use in 27MHz Transceiver Power Output |
Hitachi Semiconductor |
| 16799 |
2SC151H |
Silicon NPN Epitaxial LTP Transistor, intended for use in RF Amplifier, Medium Speed Switching |
Hitachi Semiconductor |
| 16800 |
2SC151H |
Silicon NPN Epitaxial LTP Transistor, intended for use in RF Amplifier, Medium Speed Switching |
Hitachi Semiconductor |
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