| No. |
Part Name |
Description |
Manufacturer |
| 16801 |
2SC152H |
Silicon NPN Epitaxial LTP Transistor, intended for use in RF Amplifier, Medium Speed Switching |
Hitachi Semiconductor |
| 16802 |
2SC152H |
Silicon NPN Epitaxial LTP Transistor, intended for use in RF Amplifier, Medium Speed Switching |
Hitachi Semiconductor |
| 16803 |
2SC154C |
Silicon NPN Transistor Triple Diffused Low Temperature Passivation, intended for use in High Voltage and Wide bandwidth video power output |
Hitachi Semiconductor |
| 16804 |
2SC154H |
Silicon NPN Triple Diffused LPT Transistor, intended for use in Wide Band Amplifier, High Voltage Switching |
Hitachi Semiconductor |
| 16805 |
2SC154H |
Silicon NPN Triple Diffused LPT Transistor, intended for use in Wide Band Amplifier, High Voltage Switching |
Hitachi Semiconductor |
| 16806 |
2SC1600 |
NPN medium power microwave transistor (This datasheet of NE57510 is also the datasheet of 2SC1600-Grd D, see the Electrical Characteristics table) |
NEC |
| 16807 |
2SC1623R |
NPN silicon epitaxial transistor, audio frequency and 455kHz IF amplifier |
NEC |
| 16808 |
2SC1656 |
NPN Silicon High Speed Switching Transistor (This datasheet of NE98108 is also the datasheet of 2SC1656 Grd C, see the Electrical Characteristics table) |
NEC |
| 16809 |
2SC1658 |
NPN Silicon High Speed Switching Transistor (This datasheet of NE98141 is also the datasheet of 2SC1658 Grd C, see the Electrical Characteristics table) |
NEC |
| 16810 |
2SC1662 |
NPN Silicon High Speed Switching Transistor (This datasheet of NE98241 is also the datasheet of 2SC1662 GRD C, see the Electrical Characteristics table) |
NEC |
| 16811 |
2SC1674 |
TV PIF amplifier, FM tuner RF amplifier, mixer, occillator. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 20V. Emitter-base voltage Vebo = 4V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 20mA. |
USHA India LTD |
| 16812 |
2SC1674 |
TV PIF amplifier, FM tuner RF amplifier, mixer, occillator. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 20V. Emitter-base voltage Vebo = 4V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 20mA. |
USHA India LTD |
| 16813 |
2SC1674 |
TV PIF amplifier, FM tuner RF amplifier, mixer, occillator. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 20V. Emitter-base voltage Vebo = 4V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 20mA. |
USHA India LTD |
| 16814 |
2SC1675 |
FM/AM RF amplifier, mixer, converter, oscillator,IF. Collector-base voltage Vcbo = 50V. Collector-emitter voltage Vceo = 30V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 50mA. |
USHA India LTD |
| 16815 |
2SC1675 |
FM/AM RF amplifier, mixer, converter, oscillator,IF. Collector-base voltage Vcbo = 50V. Collector-emitter voltage Vceo = 30V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 50mA. |
USHA India LTD |
| 16816 |
2SC1675 |
FM/AM RF amplifier, mixer, converter, oscillator,IF. Collector-base voltage Vcbo = 50V. Collector-emitter voltage Vceo = 30V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 50mA. |
USHA India LTD |
| 16817 |
2SC1755 |
TV Chroma, Video,Audio Output Applications |
SANYO |
| 16818 |
2SC1758 |
NPN silicon triple diffused transistor, color TV chroma, video output |
NEC |
| 16819 |
2SC1758 |
NPN silicon triple diffused transistor, color TV chroma, video output |
NEC |
| 16820 |
2SC1763 |
Silicon NPN epitaxial planar transistor 2-30MHz SSB linear 40W power, 28V supply voltage |
TOSHIBA |
| 16821 |
2SC1764 |
Silicon NPN epitaxial planar transistor 2-30MHz SSB linear 80W power, 28V supply voltage |
TOSHIBA |
| 16822 |
2SC1923 |
Transistor Silicon NPN Epitaxial Planar Type (PCT process) High Frequency Amplifier Applications FM, RF, MIX, IF Amplifier Applications |
TOSHIBA |
| 16823 |
2SC1923 |
Transistor Silicon NPN Epitaxial Planar Type (PCT process) High Frequency Amplifier Applications FM, RF, MIX, IF Amplifier Applications |
TOSHIBA |
| 16824 |
2SC1923 |
Transistor Silicon NPN Epitaxial Planar Type (PCT process) High Frequency Amplifier Applications FM, RF, MIX, IF Amplifier Applications |
TOSHIBA |
| 16825 |
2SC1924 |
NPN silicon high speed switching transistor (This datasheet of NE32740A series is also the datasheet of 2SC1924, see the Electrical Characteristics table) |
NEC |
| 16826 |
2SC1925 |
NPN silicon high speed switching transistor (This datasheet NE32740B series is also the datasheet of 2SC1925, see the Electrical Characteristics table) |
NEC |
| 16827 |
2SC2025 |
NPN medium power UHF-VHF transistor (This datasheet of NE416 series is also the datasheet of 2SC2025, see the Electrical Characteristics table) |
NEC |
| 16828 |
2SC2073 |
Silicon NPN triple diffused power transistor, power amplifier, vertical output applications |
TOSHIBA |
| 16829 |
2SC2073 |
Silicon NPN triple diffused power transistor, power amplifier, vertical output applications |
TOSHIBA |
| 16830 |
2SC2098 |
Silicon NPN epitaxial planar transistor, Citizen band and HAM band up to 50MHz RF power amplifier applications |
TOSHIBA |
| | | |
