| No. |
Part Name |
Description |
Manufacturer |
| 1681 |
GT80J101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N .CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS |
TOSHIBA |
| 1682 |
GT80J101A |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications |
TOSHIBA |
| 1683 |
GT8G103 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
| 1684 |
GT8G121 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
| 1685 |
GT8G131 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
| 1686 |
GT8G132 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
| 1687 |
GT8J101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
| 1688 |
GT8J102(SM) |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
| 1689 |
GT8Q101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
| 1690 |
GT8Q102(SM) |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
| 1691 |
HBDM60V600W |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V |
Diodes |
| 1692 |
HBDM60V600W-7 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V |
Diodes |
| 1693 |
HBFP-0405-BLK |
High Performance Isolated Collector Silicon Bipolar Transistor |
etc |
| 1694 |
HBFP-0405-TR1 |
High Performance Isolated Collector Silicon Bipolar Transistor |
etc |
| 1695 |
HBFP-0405-TR2 |
High Performance Isolated Collector Silicon Bipolar Transistor |
etc |
| 1696 |
HBFP-0420-BLK |
High Performance Isolated Collector Silicon Bipolar Transistor |
Agilent (Hewlett-Packard) |
| 1697 |
HBFP-0420-TR1 |
High Performance Isolated Collector Silicon Bipolar Transistor |
Agilent (Hewlett-Packard) |
| 1698 |
HBFP-0420-TR2 |
High Performance Isolated Collector Silicon Bipolar Transistor |
Agilent (Hewlett-Packard) |
| 1699 |
HBFP0405 |
High Performance Isolated Collector Silicon Bipolar Transistor |
etc |
| 1700 |
HBFP0420 |
High Performance Isolated Collector Silicon Bipolar Transistor |
Agilent (Hewlett-Packard) |
| 1701 |
HCPL-3000 |
Power Bipolar Transistor Base Drive Optocoupler |
Agilent (Hewlett-Packard) |
| 1702 |
HSC5094 |
NPN SILICON BIPOLAR TRANSISTOR |
Hi-Sincerity Microelectronics |
| 1703 |
IMT17 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V |
Diodes |
| 1704 |
IMT17 |
Transistors > Complex Bipolar Transistors |
ROHM |
| 1705 |
IMT17-7 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V |
Diodes |
| 1706 |
IMT1A |
Transistors > Complex Bipolar Transistors |
ROHM |
| 1707 |
IMT2A |
Transistors > Complex Bipolar Transistors |
ROHM |
| 1708 |
IMT3A |
Transistors > Complex Bipolar Transistors |
ROHM |
| 1709 |
IMT4 |
Bipolar Transistors |
Diodes |
| 1710 |
IMT4 |
Transistors > Complex Bipolar Transistors |
ROHM |
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