| No. |
Part Name |
Description |
Manufacturer |
| 1801 |
JANSR2N5401UBT |
Hi-Rel PNP bipolar transistor 150 V, 0.5 A |
ST Microelectronics |
| 1802 |
JANSR2N5551UBG |
Hi-Rel NPN bipolar transistor 160 V, 0.5 A |
ST Microelectronics |
| 1803 |
JANSR2N5551UBT |
Hi-Rel NPN bipolar transistor 160 V, 0.5 A |
ST Microelectronics |
| 1804 |
KS534505 |
Single Bipolar Transistor Module (50 Amperes/600 Volts) |
Powerex Power Semiconductors |
| 1805 |
KT234505 |
Split-dual bipolar transistor module. 100A, 600V. |
Powerex Power Semiconductors |
| 1806 |
LBN150B01 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V |
Diodes |
| 1807 |
LBN150B01-7 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V |
Diodes |
| 1808 |
LPT16ED |
30 GHz SiGe Bipolar Transistor Final |
SiGe Semiconductor |
| 1809 |
LT5817 |
PNP Bipolar Transistor, High Frequency, High Voltage for CRT Driver Applications |
TRW |
| 1810 |
LT5839 |
PNP Bipolar Transistor, High Frequency, High Voltage for CRT Driver Applications |
TRW |
| 1811 |
M57115L-01 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 1812 |
M57116L-01 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 1813 |
M57120L |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 1814 |
M57140-01 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 1815 |
M57145L-01 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 1816 |
M57146U-01 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 1817 |
M57147AU-01 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 1818 |
M57161L-01 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 1819 |
M57175L-01 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 1820 |
M57184N-715 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 1821 |
M57959L |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 1822 |
M57962L |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 1823 |
MG300Q1US11 |
INSULATED GATE BIPOLAR TRANSISTOR |
TOSHIBA |
| 1824 |
MGP11N60E |
Insulated Gate Bipolar Transistor |
Motorola |
| 1825 |
MGP11N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 1826 |
MGP11N60ED-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 1827 |
MGP14N60E |
Insulated Gate Bipolar Transistor |
Motorola |
| 1828 |
MGP14N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 1829 |
MGP15N60U |
Insulated Gate Bipolar Transistor |
Motorola |
| 1830 |
MGP15N60U-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
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