No. |
Part Name |
Description |
Manufacturer |
1681 |
2N6293 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
1682 |
2N6293 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 80V. |
General Electric Solid State |
1683 |
2N6449 |
N-Channel Silicon Junction Field-Effect Transistor |
InterFET Corporation |
1684 |
2N6449 |
N-Channel Silicon Junction Field-Effect Transistor |
Texas Instruments |
1685 |
2N6450 |
N-Channel Silicon Junction Field-Effect Transistor |
InterFET Corporation |
1686 |
2N6450 |
N-Channel Silicon Junction Field-Effect Transistor |
Texas Instruments |
1687 |
2N6451 |
N-Channel Silicon Junction Field-Effect Transistor |
InterFET Corporation |
1688 |
2N6451 |
N-Channel Silicon Junction Field-Effect Transistor |
Texas Instruments |
1689 |
2N6452 |
N-Channel Silicon Junction Field-Effect Transistor |
InterFET Corporation |
1690 |
2N6452 |
N-Channel Silicon Junction Field-Effect Transistor |
Texas Instruments |
1691 |
2N6453 |
N-Channel Silicon Junction Field-Effect Transistor |
InterFET Corporation |
1692 |
2N6453 |
N-Channel Silicon Junction Field-Effect Transistor |
Texas Instruments |
1693 |
2N6454 |
N-Channel Silicon Junction Field-Effect Transistor |
InterFET Corporation |
1694 |
2N6454 |
N-Channel Silicon Junction Field-Effect Transistor |
Texas Instruments |
1695 |
2N6473 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
1696 |
2N6473 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 110V. |
General Electric Solid State |
1697 |
2N6474 |
130 V, epitaxial-base NPN selicon versawatt transistor |
Boca Semiconductor Corporation |
1698 |
2N6474 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 130V. |
General Electric Solid State |
1699 |
2N6475 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
1700 |
2N6475 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -110V. |
General Electric Solid State |
1701 |
2N6476 |
Epitaxial-Base, Silicon N-P-N and P-N-P VERSAWATT Transistors |
Boca Semiconductor Corporation |
1702 |
2N6476 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -130V. |
General Electric Solid State |
1703 |
2N6486 |
15A, 75W, silicon N-P-N epitaxial-base VERSAWATT transistor. 50V. |
General Electric Solid State |
1704 |
2N6487 |
15A, 75W, silicon N-P-N epitaxial-base VERSAWATT transistor. 70V. |
General Electric Solid State |
1705 |
2N6488 |
15A, 75W, silicon N-P-N epitaxial-base VERSAWATT transistor. 90V. |
General Electric Solid State |
1706 |
2N6489 |
15A, 75W, silicon P-N-P epitaxial-base VERSAWATT transistor. -50V. |
General Electric Solid State |
1707 |
2N6490 |
15A, 75W, silicon P-N-P epitaxial-base VERSAWATT transistor. -70V. |
General Electric Solid State |
1708 |
2N6491 |
15A, 75W, silicon P-N-P epitaxial-base VERSAWATT transistor. -90V. |
General Electric Solid State |
1709 |
2N6550 |
N-Channel silicon junction field-effect transistor |
InterFET Corporation |
1710 |
2N6659 |
TMOS SWITCHING FET TRANSISTORS |
Motorola |
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