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Datasheets for T TRA

Datasheets found :: 14811
Page: | 53 | 54 | 55 | 56 | 57 | 58 | 59 | 60 | 61 |
No. Part Name Description Manufacturer
1681 2N6293 EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Boca Semiconductor Corporation
1682 2N6293 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 80V. General Electric Solid State
1683 2N6449 N-Channel Silicon Junction Field-Effect Transistor InterFET Corporation
1684 2N6449 N-Channel Silicon Junction Field-Effect Transistor Texas Instruments
1685 2N6450 N-Channel Silicon Junction Field-Effect Transistor InterFET Corporation
1686 2N6450 N-Channel Silicon Junction Field-Effect Transistor Texas Instruments
1687 2N6451 N-Channel Silicon Junction Field-Effect Transistor InterFET Corporation
1688 2N6451 N-Channel Silicon Junction Field-Effect Transistor Texas Instruments
1689 2N6452 N-Channel Silicon Junction Field-Effect Transistor InterFET Corporation
1690 2N6452 N-Channel Silicon Junction Field-Effect Transistor Texas Instruments
1691 2N6453 N-Channel Silicon Junction Field-Effect Transistor InterFET Corporation
1692 2N6453 N-Channel Silicon Junction Field-Effect Transistor Texas Instruments
1693 2N6454 N-Channel Silicon Junction Field-Effect Transistor InterFET Corporation
1694 2N6454 N-Channel Silicon Junction Field-Effect Transistor Texas Instruments
1695 2N6473 EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Boca Semiconductor Corporation
1696 2N6473 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 110V. General Electric Solid State
1697 2N6474 130 V, epitaxial-base NPN selicon versawatt transistor Boca Semiconductor Corporation
1698 2N6474 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 130V. General Electric Solid State
1699 2N6475 EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Boca Semiconductor Corporation
1700 2N6475 Epitaxial-base, silicon P-N-P VERSAWATT transistor. -110V. General Electric Solid State
1701 2N6476 Epitaxial-Base, Silicon N-P-N and P-N-P VERSAWATT Transistors Boca Semiconductor Corporation
1702 2N6476 Epitaxial-base, silicon P-N-P VERSAWATT transistor. -130V. General Electric Solid State
1703 2N6486 15A, 75W, silicon N-P-N epitaxial-base VERSAWATT transistor. 50V. General Electric Solid State
1704 2N6487 15A, 75W, silicon N-P-N epitaxial-base VERSAWATT transistor. 70V. General Electric Solid State
1705 2N6488 15A, 75W, silicon N-P-N epitaxial-base VERSAWATT transistor. 90V. General Electric Solid State
1706 2N6489 15A, 75W, silicon P-N-P epitaxial-base VERSAWATT transistor. -50V. General Electric Solid State
1707 2N6490 15A, 75W, silicon P-N-P epitaxial-base VERSAWATT transistor. -70V. General Electric Solid State
1708 2N6491 15A, 75W, silicon P-N-P epitaxial-base VERSAWATT transistor. -90V. General Electric Solid State
1709 2N6550 N-Channel silicon junction field-effect transistor InterFET Corporation
1710 2N6659 TMOS SWITCHING FET TRANSISTORS Motorola


Datasheets found :: 14811
Page: | 53 | 54 | 55 | 56 | 57 | 58 | 59 | 60 | 61 |



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