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Datasheets for T TRA

Datasheets found :: 14811
Page: | 54 | 55 | 56 | 57 | 58 | 59 | 60 | 61 | 62 |
No. Part Name Description Manufacturer
1711 2N6660 TMOS SWITCHING FET TRANSISTORS Motorola
1712 2N6661 TMOS SWITCHING FET TRANSISTORS Motorola
1713 2N6702 High-current silicon N-P-N VERSAWATT transistor. General Electric Solid State
1714 2N6703 High-current silicon N-P-N VERSAWATT transistor. General Electric Solid State
1715 2N6704 High-current silicon N-P-N VERSAWATT transistor. General Electric Solid State
1716 2N6755 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A. General Electric Solid State
1717 2N6756 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A. General Electric Solid State
1718 2N6757 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. General Electric Solid State
1719 2N6758 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. General Electric Solid State
1720 2N6759 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
1721 2N6760 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. General Electric Solid State
1722 2N6761 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
1723 2N6762 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
1724 2N6764 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 38A. General Electric Solid State
1725 2N6766 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A. General Electric Solid State
1726 2N6782 N-channel enhancement-mode power field-effect transistor. 3.5 A, 100V. General Electric Solid State
1727 2N6788 N-channel enhancement-mode power field-effect transistor. 6.0 A, 100V. General Electric Solid State
1728 2N6796 N-channel enhancement-mode power field-effect transistor. 8.0 A, 100V. General Electric Solid State
1729 2N6796 TMOS FET TRANSISTOR N - CHANNEL SemeLAB
1730 2N697 NPN Silicon Transistor for high level audio applications Newmarket Transistors NKT
1731 2N7000 N-Channel Enhancement Mode Field Effect Transistor Fairchild Semiconductor
1732 2N7000 N-Channel Enhancement Mode Field Effect Transistor National Semiconductor
1733 2N7000 N-channel enhancement mode field-effect transistor Philips
1734 2N7000 Enhancement-Mode MOSFET Transistors Vishay
1735 2N7000_D26Z N-Channel Enhancement Mode Field Effect Transistor Fairchild Semiconductor
1736 2N7002 N-Channel Enhancement Mode Field Effect Transistor Chino-Excel Technology
1737 2N7002 N-Channel Enhancement Mode Field Effect Transistor Fairchild Semiconductor
1738 2N7002 N-Channel Enhancement Mode Field Effect Transistor National Semiconductor
1739 2N7002 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Panjit International Inc
1740 2N7002 N-channel enhancement mode field-effect transistor Philips


Datasheets found :: 14811
Page: | 54 | 55 | 56 | 57 | 58 | 59 | 60 | 61 | 62 |



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