No. |
Part Name |
Description |
Manufacturer |
1711 |
2N6293 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
1712 |
2N6298 |
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS |
Boca Semiconductor Corporation |
1713 |
2N6299 |
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS |
Boca Semiconductor Corporation |
1714 |
2N6300 |
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS |
Boca Semiconductor Corporation |
1715 |
2N6301 |
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS |
Boca Semiconductor Corporation |
1716 |
2N6312 |
COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS |
Boca Semiconductor Corporation |
1717 |
2N6313 |
COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS |
Boca Semiconductor Corporation |
1718 |
2N6314 |
COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS |
Boca Semiconductor Corporation |
1719 |
2N6315 |
COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS |
Boca Semiconductor Corporation |
1720 |
2N6316 |
COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS |
Boca Semiconductor Corporation |
1721 |
2N6317 |
COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS |
Boca Semiconductor Corporation |
1722 |
2N6318 |
COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS |
Boca Semiconductor Corporation |
1723 |
2N6338 |
HIGH-POWER NPN SILICON TRANSISTORS |
Boca Semiconductor Corporation |
1724 |
2N6339 |
HIGH-POWER NPN SILICON TRANSISTORS |
Boca Semiconductor Corporation |
1725 |
2N6340 |
HIGH-POWER NPN SILICON TRANSISTORS |
Boca Semiconductor Corporation |
1726 |
2N6341 |
HIGH-POWER NPN SILICON TRANSISTORS |
Boca Semiconductor Corporation |
1727 |
2N6386 |
DARLINGTON SILICON POWER TRANSISTORS |
Boca Semiconductor Corporation |
1728 |
2N6387 |
DARLINGTON SILICON POWER TRANSISTORS |
Boca Semiconductor Corporation |
1729 |
2N6388 |
DARLINGTON SILICON POWER TRANSISTORS |
Boca Semiconductor Corporation |
1730 |
2N6420 |
COMPLEMENTARY MEDIUM-POWER HIGH VOLTAGE POWER TRANSISTORS |
Boca Semiconductor Corporation |
1731 |
2N6421 |
COMPLEMENTARY MEDIUM-POWER HIGH VOLTAGE POWER TRANSISTORS |
Boca Semiconductor Corporation |
1732 |
2N6422 |
COMPLEMENTARY MEDIUM-POWER HIGH VOLTAGE POWER TRANSISTORS |
Boca Semiconductor Corporation |
1733 |
2N6423 |
COMPLEMENTARY MEDIUM-POWER HIGH VOLTAGE POWER TRANSISTORS |
Boca Semiconductor Corporation |
1734 |
2N6428 |
Amplifier transistor. Collector-emitter voltage: Vceo = 50V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
1735 |
2N6428A |
Amplifier transistor. Collector-emitter voltage: Vceo = 50V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
1736 |
2N6436 |
HIGH-POWER PNP SILICON TRANSISTORS |
Boca Semiconductor Corporation |
1737 |
2N6437 |
HIGH-POWER PNP SILICON TRANSISTORS |
Boca Semiconductor Corporation |
1738 |
2N6438 |
HIGH-POWER PNP SILICON TRANSISTORS |
Boca Semiconductor Corporation |
1739 |
2N6473 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
1740 |
2N6474 |
130 V, epitaxial-base NPN selicon versawatt transistor |
Boca Semiconductor Corporation |
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