No. |
Part Name |
Description |
Manufacturer |
1741 |
2N6475 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
1742 |
2N6476 |
Epitaxial-Base, Silicon N-P-N and P-N-P VERSAWATT Transistors |
Boca Semiconductor Corporation |
1743 |
2N6486 |
NPN/PNP PLASTIC POWER TRANSISTORS |
Boca Semiconductor Corporation |
1744 |
2N6487 |
NPN/PNP PLASTIC POWER TRANSISTORS |
Boca Semiconductor Corporation |
1745 |
2N6488 |
NPN/PNP PLASTIC POWER TRANSISTORS |
Boca Semiconductor Corporation |
1746 |
2N6489 |
NPN/PNP PLASTIC POWER TRANSISTORS |
Boca Semiconductor Corporation |
1747 |
2N6490 |
NPN/PNP PLASTIC POWER TRANSISTORS |
Boca Semiconductor Corporation |
1748 |
2N6491 |
NPN/PNP PLASTIC POWER TRANSISTORS |
Boca Semiconductor Corporation |
1749 |
2N6494 |
PNP SILICON POWER TRANSISTOR |
Boca Semiconductor Corporation |
1750 |
2N6497 |
HIGH VOLTAGE NPN SILICON POWER TRANSISTORS |
Boca Semiconductor Corporation |
1751 |
2N6498 |
HIGH VOLTAGE NPN SILICON POWER TRANSISTORS |
Boca Semiconductor Corporation |
1752 |
2N6499 |
HIGH VOLTAGE NPN SILICON POWER TRANSISTORS |
Boca Semiconductor Corporation |
1753 |
2N6500 |
HIGH SPEED EPITAXIAL COLLECTOR SILICON NPN PLANAR TRANSISTORS |
General Electric Solid State |
1754 |
2N6500 |
HIGH SPEED EPITAXIAL COLLECTOR SILICON NPN PLANAR TRANSISTORS |
General Electric Solid State |
1755 |
2N6515 |
High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
1756 |
2N6516 |
High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
1757 |
2N6517 |
High voltage transistor. Collector-emitter voltage: Vceo = 350V. Collector-base voltage: Vcbo = 350V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
1758 |
2N6518 |
High voltage transistor. Collector-emitter voltage: Vceo = -250V. Collector-base voltage: Vcbo = -250V. Collector dissipation: Pc(max) = 0.625W. |
USHA India LTD |
1759 |
2N6519 |
High voltage transistor. Collector-emitter voltage: Vceo = -300V. Collector-base voltage: Vcbo = -300V. Collector dissipation: Pc(max) = 0.625W. |
USHA India LTD |
1760 |
2N6520 |
High voltage transistor. Collector-emitter voltage: Vceo = -350V. Collector-base voltage: Vcbo = -350V. Collector dissipation: Pc(max) = 0.625W. |
USHA India LTD |
1761 |
2N6542 |
SWCHMODE SERIES NPN SILICON POWER TRANSISTORS |
Boca Semiconductor Corporation |
1762 |
2N6543 |
SWCHMODE SERIES NPN SILICON POWER TRANSISTORS |
Boca Semiconductor Corporation |
1763 |
2N6546 |
SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS |
Boca Semiconductor Corporation |
1764 |
2N6547 |
SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS |
Boca Semiconductor Corporation |
1765 |
2N6564 |
300 V, silicon controlled rectifier |
Boca Semiconductor Corporation |
1766 |
2N6565 |
400 V, silicon controlled rectifier |
Boca Semiconductor Corporation |
1767 |
2N6594 |
PNP SILICON POWER TRANSISTOR |
Boca Semiconductor Corporation |
1768 |
2N6609 |
COMPLEMENTARY SILICON POWER TRANSISTORS |
Boca Semiconductor Corporation |
1769 |
2N6666 |
PLASTIC MEDIUM-POWER SILICON TRANSISTORS |
Boca Semiconductor Corporation |
1770 |
2N6667 |
PLASTIC MEDIUM-POWER SILICON TRANSISTORS |
Boca Semiconductor Corporation |
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