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Datasheets for CTOR

Datasheets found :: 29586
Page: | 55 | 56 | 57 | 58 | 59 | 60 | 61 | 62 | 63 |
No. Part Name Description Manufacturer
1741 2N6475 EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Boca Semiconductor Corporation
1742 2N6476 Epitaxial-Base, Silicon N-P-N and P-N-P VERSAWATT Transistors Boca Semiconductor Corporation
1743 2N6486 NPN/PNP PLASTIC POWER TRANSISTORS Boca Semiconductor Corporation
1744 2N6487 NPN/PNP PLASTIC POWER TRANSISTORS Boca Semiconductor Corporation
1745 2N6488 NPN/PNP PLASTIC POWER TRANSISTORS Boca Semiconductor Corporation
1746 2N6489 NPN/PNP PLASTIC POWER TRANSISTORS Boca Semiconductor Corporation
1747 2N6490 NPN/PNP PLASTIC POWER TRANSISTORS Boca Semiconductor Corporation
1748 2N6491 NPN/PNP PLASTIC POWER TRANSISTORS Boca Semiconductor Corporation
1749 2N6494 PNP SILICON POWER TRANSISTOR Boca Semiconductor Corporation
1750 2N6497 HIGH VOLTAGE NPN SILICON POWER TRANSISTORS Boca Semiconductor Corporation
1751 2N6498 HIGH VOLTAGE NPN SILICON POWER TRANSISTORS Boca Semiconductor Corporation
1752 2N6499 HIGH VOLTAGE NPN SILICON POWER TRANSISTORS Boca Semiconductor Corporation
1753 2N6500 HIGH SPEED EPITAXIAL COLLECTOR SILICON NPN PLANAR TRANSISTORS General Electric Solid State
1754 2N6500 HIGH SPEED EPITAXIAL COLLECTOR SILICON NPN PLANAR TRANSISTORS General Electric Solid State
1755 2N6515 High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
1756 2N6516 High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
1757 2N6517 High voltage transistor. Collector-emitter voltage: Vceo = 350V. Collector-base voltage: Vcbo = 350V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
1758 2N6518 High voltage transistor. Collector-emitter voltage: Vceo = -250V. Collector-base voltage: Vcbo = -250V. Collector dissipation: Pc(max) = 0.625W. USHA India LTD
1759 2N6519 High voltage transistor. Collector-emitter voltage: Vceo = -300V. Collector-base voltage: Vcbo = -300V. Collector dissipation: Pc(max) = 0.625W. USHA India LTD
1760 2N6520 High voltage transistor. Collector-emitter voltage: Vceo = -350V. Collector-base voltage: Vcbo = -350V. Collector dissipation: Pc(max) = 0.625W. USHA India LTD
1761 2N6542 SWCHMODE SERIES NPN SILICON POWER TRANSISTORS Boca Semiconductor Corporation
1762 2N6543 SWCHMODE SERIES NPN SILICON POWER TRANSISTORS Boca Semiconductor Corporation
1763 2N6546 SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS Boca Semiconductor Corporation
1764 2N6547 SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS Boca Semiconductor Corporation
1765 2N6564 300 V, silicon controlled rectifier Boca Semiconductor Corporation
1766 2N6565 400 V, silicon controlled rectifier Boca Semiconductor Corporation
1767 2N6594 PNP SILICON POWER TRANSISTOR Boca Semiconductor Corporation
1768 2N6609 COMPLEMENTARY SILICON POWER TRANSISTORS Boca Semiconductor Corporation
1769 2N6666 PLASTIC MEDIUM-POWER SILICON TRANSISTORS Boca Semiconductor Corporation
1770 2N6667 PLASTIC MEDIUM-POWER SILICON TRANSISTORS Boca Semiconductor Corporation


Datasheets found :: 29586
Page: | 55 | 56 | 57 | 58 | 59 | 60 | 61 | 62 | 63 |



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