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Datasheets for PLICA

Datasheets found :: 24654
Page: | 56 | 57 | 58 | 59 | 60 | 61 | 62 | 63 | 64 |
No. Part Name Description Manufacturer
1771 2N4198 Multi-purpose silicon controlled rectifier suited for industrial, consumer, and military applications Motorola
1772 2N4199 Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment Motorola
1773 2N4200 Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment Motorola
1774 2N4201 Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment Motorola
1775 2N4202 Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment Motorola
1776 2N4203 Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment Motorola
1777 2N4204 Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment Motorola
1778 2N4223 Silicon N-channel junction field-effect transistor, designed for VHF amplifier and mixer applications Motorola
1779 2N4224 Silicon N-channel junction field-effect transistor, designed for VHF amplifier and mixer applications Motorola
1780 2N4233A POWER TRANSISTORS: GENERAL PURPOSE AMPLIFIER AND LOW-FREQUENCY SWITCHING APPLICATION MOSPEC Semiconductor
1781 2N4248 Silicon PNP Transistors designed for low level - low nosie amplifier applications Central Semiconductor
1782 2N4249 Silicon PNP Transistors designed for low level - low nosie amplifier applications Central Semiconductor
1783 2N4250 Silicon PNP Transistors designed for low level - low nosie amplifier applications Central Semiconductor
1784 2N4250A Silicon PNP Transistors designed for low level - low nosie amplifier applications Central Semiconductor
1785 2N4264 NPN silicon transistor designed for low-level, saturated logic applications Motorola
1786 2N4265 NPN silicon transistor designed for low-level, saturated logic applications Motorola
1787 2N4392CSM SMALL SIGNAL N.CHANNEL J.FET IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS SemeLAB
1788 2N4393CSM SMALL SIGNAL N.CHANNEL J.FET IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS SemeLAB
1789 2N4416 Silicon N-channel junction field-effect transistor designed for VHF/UHF amplifier applications Motorola
1790 2N4427 Epitaxial planar NPN transistor designed for VHF class A, B or C amplifier and oscillator applications SGS-ATES
1791 2N4428 Epitaxial planar NPN transistor designed for VHF-UHF class C amplifier output stages in military an industrial communications applications SGS-ATES
1792 2N4429 Microwave Power NPN Transistor for CLASS C applications SGS Thomson Microelectronics
1793 2N4430 Microwave Power NPN Transistor for CLASS C applications SGS Thomson Microelectronics
1794 2N4431 Microwave Power NPN Transistor for CLASS C applications SGS Thomson Microelectronics
1795 2N4441 Plastic thyristors (silicon controlled rectifiers) designed for high-volume consumer phase-control applications Motorola
1796 2N4442 Plastic thyristors (silicon controlled rectifiers) designed for high-volume consumer phase-control applications Motorola
1797 2N4443 Plastic thyristors (silicon controlled rectifiers) designed for high-volume consumer phase-control applications Motorola
1798 2N4444 Plastic thyristors (silicon controlled rectifiers) designed for high-volume consumer phase-control applications Motorola
1799 2N456A PNP high-current germanium power transistor for industrial applications Motorola
1800 2N457A PNP high-current germanium power transistor for industrial applications Motorola


Datasheets found :: 24654
Page: | 56 | 57 | 58 | 59 | 60 | 61 | 62 | 63 | 64 |



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