| No. |
Part Name |
Description |
Manufacturer |
| 1831 |
2N5190 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 1832 |
2N5191 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 1833 |
2N5192 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 1834 |
2N5193 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 1835 |
2N5194 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 1836 |
2N5195 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 1837 |
2N5208 |
PNP silicon annular amplifier transistor designed for general-purpose RF amplifier applications up to 300 MHz |
Motorola |
| 1838 |
2N5294 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 70Vdc, Vcer = 75Vdc, Vcbo = 80Vdc, Veb = 7Vdc, Ic = 4Adc, Ib = 2Adc, PD = 36W. |
USHA India LTD |
| 1839 |
2N5296 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 40Vdc, Vcer = 50Vdc, Vcbo = 60Vdc, Veb = 5Vdc, Ic = 4Adc, Ib = 2Adc, PD = 36W. |
USHA India LTD |
| 1840 |
2N5324 |
PNP germanium power transistor designed for switching, inverter, TV deflection and industrial power supply applications |
Motorola |
| 1841 |
2N5325 |
PNP germanium power transistor designed for switching, inverter, TV deflection and industrial power supply applications |
Motorola |
| 1842 |
2N5336 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
| 1843 |
2N5336 |
Planar transistor for switching applications |
SGS-ATES |
| 1844 |
2N5337 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
| 1845 |
2N5338 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
| 1846 |
2N5338 |
Planar transistor for switching applications |
SGS-ATES |
| 1847 |
2N5339 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
| 1848 |
2N5339 |
Planar transistor for switching applications |
SGS-ATES |
| 1849 |
2N5400 |
PNP Silicon Expitaxial Planar Transistor for general purpose/ high voltage amplifier applications |
Semtech |
| 1850 |
2N5401 |
PNP Silicon Transistor (General purpose amplifier High voltage application) |
AUK Corp |
| 1851 |
2N5401 |
PNP Silicon Expitaxial Planar Transistor for general purpose/ high voltage amplifier applications |
Semtech |
| 1852 |
2N5415CSM4 |
PNP PLANAR EPITAXIAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 1853 |
2N5416CSM4 |
PNP PLANAR EPITAXIAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 1854 |
2N5470 |
The Use of Coaxial-Package Transistors in Microstripline Circuits - Application Note |
RCA Solid State |
| 1855 |
2N5470 |
UHF Power Generation Using RF Power Transistor - Application Note |
RCA Solid State |
| 1856 |
2N5484 |
N-channel depletion mode (Type A) junction field-effect transistor designed for VHF/UHF amplfier applications |
Motorola |
| 1857 |
2N5485 |
N-channel depletion mode (Type A) junction field-effect transistor designed for VHF/UHF amplfier applications |
Motorola |
| 1858 |
2N5486 |
N-channel depletion mode (Type A) junction field-effect transistor designed for VHF/UHF amplfier applications |
Motorola |
| 1859 |
2N554 |
PNP germanium power transistor for non-critical applications requiring economical components |
Motorola |
| 1860 |
2N555 |
PNP germanium power transistor for non-critical applications requiring economical components |
Motorola |
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