| No. |
Part Name |
Description |
Manufacturer |
| 1801 |
2N1654 |
PNP planar for alloy transistor replacements - silicon |
Sprague |
| 1802 |
2N1655 |
PNP planar for alloy transistor replacements - silicon |
Sprague |
| 1803 |
2N1656 |
PNP planar for alloy transistor replacements - silicon |
Sprague |
| 1804 |
2N1692 |
PNP germanium mesa transistor for VHF power amplifier applications |
Motorola |
| 1805 |
2N1693 |
PNP germanium mesa transistor for VHF power amplifier applications |
Motorola |
| 1806 |
2N1705 |
PNP germanium transistor for audio driver applications in transistorized radio receivers |
Motorola |
| 1807 |
2N1706 |
PNP germanium transistor for audio driver applications in transistorized radio receivers |
Motorola |
| 1808 |
2N1707 |
PNP germanium transistor for audio driver applications in transistorized radio receivers |
Motorola |
| 1809 |
2N1708 |
NPN Silicon transistor designed for very high-speed, low-power saturated switching applications for computers in military and industrial service |
Motorola |
| 1810 |
2N1708 |
NPN Silicon transistor designed for very high-speed, low-power saturated switching applications for computers in military and industrial service |
Motorola |
| 1811 |
2N1711 |
Silicon NPN Planar Transistor for general and AF amplifiers |
AEG-TELEFUNKEN |
| 1812 |
2N1711 |
NPN Silicon transistor for switching applications |
IPRS Baneasa |
| 1813 |
2N1711 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 1814 |
2N1711 |
NPN silicon annular Star transistor for high-speed switching and DC to UHF amplifier applications |
Motorola |
| 1815 |
2N1711 |
NPN Silicon Transistor for high level audio applications |
Newmarket Transistors NKT |
| 1816 |
2N1711A |
NPN Silicon transistor for switching applications |
IPRS Baneasa |
| 1817 |
2N1724 |
NPN silicon power transistor designed for switching and aplifier applications |
Motorola |
| 1818 |
2N1725 |
NPN silicon power transistor designed for switching and aplifier applications |
Motorola |
| 1819 |
2N1742 |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
| 1820 |
2N1742 |
MADT® PNP germanium transistor for UHF applications |
Sprague |
| 1821 |
2N1743 |
MADT® PNP germanium transistor for UHF applications |
Sprague |
| 1822 |
2N1744 |
MADT® PNP germanium transistor for UHF applications |
Sprague |
| 1823 |
2N176 |
PNP germanium power transistor for economical power switching circuits and commercial grade power amplifier applications |
Motorola |
| 1824 |
2N178 |
PNP germanium power transistor for non-critical applications requiring economical components |
Motorola |
| 1825 |
2N1792 |
V(rrm/drm): 50V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1826 |
2N1793 |
V(rrm/drm): 100V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1827 |
2N1794 |
V(rrm/drm): 150V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1828 |
2N1795 |
V(rrm/drm): 200V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1829 |
2N1796 |
V(rrm/drm): 250V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1830 |
2N1797 |
V(rrm/drm): 300V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
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