| No. |
Part Name |
Description |
Manufacturer |
| 1831 |
2N1798 |
V(rrm/drm): 400V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1832 |
2N1799 |
V(rrm/drm): 600V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1833 |
2N1805 |
V(rrm/drm): 600V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1834 |
2N1806 |
V(rrm/drm): 720V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1835 |
2N1807 |
V(rrm/drm): 840V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1836 |
2N1889 |
NPN silicon epitaxy planar transistor for amplifier and switch applications |
ITT Semiconductors |
| 1837 |
2N1890 |
NPN silicon epitaxy planar transistor for amplifier and switch applications |
ITT Semiconductors |
| 1838 |
2N1893 |
Silicon NPN planar transistor for high speed switchings |
AEG-TELEFUNKEN |
| 1839 |
2N1893 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 1840 |
2N1893 |
NPN silicon annular transistor designed for medium-power applications |
Motorola |
| 1841 |
2N1893 |
NPN Silicon Transistor for high level audio applications |
Newmarket Transistors NKT |
| 1842 |
2N1909 |
V(rrm/drm): 25V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1843 |
2N1910 |
V(rrm/drm): 50V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1844 |
2N1911 |
V(rrm/drm): 100V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1845 |
2N1912 |
V(rrm/drm): 150V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1846 |
2N1913 |
V(rrm/drm): 200V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1847 |
2N1914 |
V(rrm/drm): 250V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1848 |
2N1915 |
V(rrm/drm): 300V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1849 |
2N1916 |
V(rrm/drm): 400V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1850 |
2N1917 |
PNP planar for alloy chopper replacements - silicon transistor |
Sprague |
| 1851 |
2N1918 |
PNP planar for alloy chopper replacements - silicon transistor |
Sprague |
| 1852 |
2N1919 |
PNP planar for alloy chopper replacements - silicon transistor |
Sprague |
| 1853 |
2N1920 |
PNP planar for alloy chopper replacements - silicon transistor |
Sprague |
| 1854 |
2N1921 |
PNP planar for alloy chopper replacements - silicon transistor |
Sprague |
| 1855 |
2N1922 |
PNP planar for alloy chopper replacements - silicon transistor |
Sprague |
| 1856 |
2N1924 |
PNP germanium transistor for general purpose, low frequency applications |
Motorola |
| 1857 |
2N1925 |
PNP germanium transistor for general purpose, low frequency applications |
Motorola |
| 1858 |
2N1926 |
PNP germanium transistor for general purpose, low frequency applications |
Motorola |
| 1859 |
2N1990 |
NPN silicon transistor designed for driving neon display tubes |
Motorola |
| 1860 |
2N1991 |
PNP silicon annular transistor for medium-current switching applications |
Motorola |
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