| No. |
Part Name |
Description |
Manufacturer |
| 1951 |
2N2221 |
NPN Silicon transistor for switching applications |
IPRS Baneasa |
| 1952 |
2N2221 |
NPN Silicon annular star transistor for high-speed switching and DC to UHF amplifier applications, 2N2906 PNP complementary |
Motorola |
| 1953 |
2N2221 |
NPN Silicon Planar Transistor for medium level switching |
Newmarket Transistors NKT |
| 1954 |
2N2221A |
Silicon NPN epitaxial planar transistor for high speed switchings and RF amplifier circuits |
AEG-TELEFUNKEN |
| 1955 |
2N2221A |
NPN Silicon transistor for switching applications |
IPRS Baneasa |
| 1956 |
2N2221A |
NPN silicon annular Star transistor for high-speed and switching and DC to VHF amplifier applications |
Motorola |
| 1957 |
2N2221A |
NPN Silicon Planar Transistor for medium level switching |
Newmarket Transistors NKT |
| 1958 |
2N2222 |
Silicon NPN epitaxial planar transistor for high speed switchings and RF amplifier circuits |
AEG-TELEFUNKEN |
| 1959 |
2N2222 |
NPN Silicon transistor for switching applications |
IPRS Baneasa |
| 1960 |
2N2222 |
NPN Silicon annular star transistor for high-speed switching and DC to UHF amplifier applications, 2N2907 PNP complementary |
Motorola |
| 1961 |
2N2222 |
NPN Silicon Planar Transistor for medium level switching |
Newmarket Transistors NKT |
| 1962 |
2N2222A |
Silicon NPN epitaxial planar transistor for high speed switchings and RF amplifier circuits |
AEG-TELEFUNKEN |
| 1963 |
2N2222A |
Silicon transistor for switching applications |
IPRS Baneasa |
| 1964 |
2N2222A |
NPN silicon annular Star transistor for high-speed and switching and DC to VHF amplifier applications |
Motorola |
| 1965 |
2N2222A |
NPN Silicon Planar Transistor for medium level switching |
Newmarket Transistors NKT |
| 1966 |
2N2222ACSM |
HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 1967 |
2N2222ACSM4 |
HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 1968 |
2N2222ADCSM |
DUAL HIGH SPEED, MEDIUM POWER NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 1969 |
2N2222AXCSM |
Bipolar NPN Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications |
SemeLAB |
| 1970 |
2N2223 |
NPN silicon annular Star dual transistor matched pair for differential amplifiers and other applications |
Motorola |
| 1971 |
2N2223A |
NPN silicon annular Star dual transistor matched pair for differential amplifiers and other applications |
Motorola |
| 1972 |
2N2224 |
NPN silicon annular transistor designed primarly for high speed switching applications |
Motorola |
| 1973 |
2N2242 |
NPN silicon annular transistor designed for high-speed, low-power saturated switching applications |
Motorola |
| 1974 |
2N2273 |
High-frequency germanium PNP transistor, designed for mlitary and high-reliability industrial as well as comercial VHF amplifier applications |
Motorola |
| 1975 |
2N2297 |
NPN silicon epitaxy planar transistor for amplifier and switch applications with higher collector current |
ITT Semiconductors |
| 1976 |
2N2297 |
NPN Silicon Transistor for high level audio applications |
Newmarket Transistors NKT |
| 1977 |
2N2322 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
| 1978 |
2N2323 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
| 1979 |
2N2324 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
| 1980 |
2N2325 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
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