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Datasheets for FOR

Datasheets found :: 87309
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No. Part Name Description Manufacturer
2011 2N2405 NPN silicon annular transistor designed for medium-power applications Motorola
2012 2N2415 Germanium ultra-high frequency transistor for very low-noise, high-gain amplifiers, oscillators, mixers, and frequency multipliers Motorola
2013 2N2416 Germanium ultra-high frequency transistor for very low-noise, high-gain amplifiers, oscillators, mixers, and frequency multipliers Motorola
2014 2N2453 Dual NPN silicon transistor designed for differential amplifier applications Motorola
2015 2N2453A Dual NPN silicon transistor designed for differential amplifier applications Motorola
2016 2N2480 NPN silicon annular Star dual transistor matched pair for differential amplifiers and other applications Motorola
2017 2N2480A NPN silicon annular Star dual transistor matched pair for differential amplifiers and other applications Motorola
2018 2N2483 NPN Silicon Planar Transistor for low-level audio applications Newmarket Transistors NKT
2019 2N2484 NPN Silicon Planar Transistor for low-level audio applications Newmarket Transistors NKT
2020 2N2484CSM HIGH SPEED, MEDIUM POWER, NPN GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS SemeLAB
2021 2N2537 NPN silicon annular Star transistor for high-speed switching Motorola
2022 2N2538 NPN silicon annular Star transistor for high-speed switching Motorola
2023 2N2539 NPN silicon annular Star transistor for high-speed switching Motorola
2024 2N2540 NPN silicon annular Star transistor for high-speed switching Motorola
2025 2N2573 Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance Motorola
2026 2N2574 Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance Motorola
2027 2N2575 Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance Motorola
2028 2N2576 Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance Motorola
2029 2N2577 Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance Motorola
2030 2N2578 Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance Motorola
2031 2N2579 Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance Motorola
2032 2N2635 PNP germanium epitaxial mesa transistor for high-speed switching applications Motorola
2033 2N2639 Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers Motorola
2034 2N2640 Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers Motorola
2035 2N2641 Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers Motorola
2036 2N2642 Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers Motorola
2037 2N2643 Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers Motorola
2038 2N2644 Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers Motorola
2039 2N2646 Silicon annular PN unijunction transistor designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits Motorola
2040 2N2647 Silicon annular PN unijunction transistor designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits Motorola


Datasheets found :: 87309
Page: | 64 | 65 | 66 | 67 | 68 | 69 | 70 | 71 | 72 |



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