| No. |
Part Name |
Description |
Manufacturer |
| 1801 |
2N3135 |
SEPT® NPN planar epitaxial low noise transistor |
Sprague |
| 1802 |
2N3136 |
SEPT® NPN planar epitaxial low noise transistor |
Sprague |
| 1803 |
2N3137 |
Epitaxial planar NPN transistor, designed for application as a Class-C, RF power amplifier |
SGS-ATES |
| 1804 |
2N3227 |
SEPT® NPN planar epitaxial low noise transistor |
Sprague |
| 1805 |
2N3252 |
Planar Silicon epitaxial NPN Transistor |
COMPELEC |
| 1806 |
2N3279 |
PNP germanium epitaxial mesa transistor for high gain, low-noise amplifier, oscillator, mixer and frequency multiplier |
Motorola |
| 1807 |
2N3280 |
PNP germanium epitaxial mesa transistor for high gain, low-noise amplifier, oscillator, mixer and frequency multiplier |
Motorola |
| 1808 |
2N3281 |
PNP germanium epitaxial mesa transistor for high gain, low-noise amplifier, oscillator, mixer and frequency multiplier |
Motorola |
| 1809 |
2N3282 |
PNP germanium epitaxial mesa transistor for high gain, low-noise amplifier, oscillator, mixer and frequency multiplier |
Motorola |
| 1810 |
2N3283 |
PNP germanium epitaxial mesa transistor for TV, RF and IF amplifier, oscillator and general purpose applications |
Motorola |
| 1811 |
2N3284 |
PNP germanium epitaxial mesa transistor for TV, RF and IF amplifier, oscillator and general purpose applications |
Motorola |
| 1812 |
2N3285 |
PNP germanium epitaxial mesa transistor for TV, RF and IF amplifier, oscillator and general purpose applications |
Motorola |
| 1813 |
2N3286 |
PNP germanium epitaxial mesa transistor for TV, RF and IF amplifier, oscillator and general purpose applications |
Motorola |
| 1814 |
2N3375 |
Silicon NPN epitaxial high frequency power transistor for VHF and UHF power stages, oscillators and driver stages |
AEG-TELEFUNKEN |
| 1815 |
2N3375 |
Silicon NPN overlay epitaxial planar transistor for VHF/UHF transmitting applications |
ICCE |
| 1816 |
2N3375 |
Silicon Epitaxial Planar Overlay Transistor, collector connected to the case, intended for VHF/UHF transmitting |
Philips |
| 1817 |
2N3375 |
Silicon NPN planar epitaxial transistor for 175 MHz transmitters at 28 V supply voltage |
VALVO |
| 1818 |
2N3390 |
NPN silicon planar epitaxial transistor |
Micro Electronics |
| 1819 |
2N3391 |
NPN silicon planar epitaxial transistor |
Micro Electronics |
| 1820 |
2N3392 |
NPN silicon planar epitaxial transistor |
Micro Electronics |
| 1821 |
2N3393 |
NPN silicon planar epitaxial transistor |
Micro Electronics |
| 1822 |
2N3394 |
NPN silicon planar epitaxial transistor |
Micro Electronics |
| 1823 |
2N3395 |
NPN silicon planar epitaxial transistor |
Micro Electronics |
| 1824 |
2N3396 |
NPN silicon planar epitaxial transistor |
Micro Electronics |
| 1825 |
2N3397 |
NPN silicon planar epitaxial transistor |
Micro Electronics |
| 1826 |
2N3398 |
NPN silicon planar epitaxial transistor |
Micro Electronics |
| 1827 |
2N3440S |
Silicon planar epitaxial NPN transistor intended for high voltage switching and linear amplifier applications |
SGS-ATES |
| 1828 |
2N3442 |
High voltage hometaxial NPN transistor in Jedec TO-3 metal case |
SGS-ATES |
| 1829 |
2N3442 |
Silicon HOMETAXIAL NPN transistor, high power, high voltage switch |
SGS-ATES |
| 1830 |
2N3478 |
Silicon NPN Epitaxial planar RF transistor |
RCA Solid State |
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