| No. |
Part Name |
Description |
Manufacturer |
| 1861 |
2N3716 |
Silicon epitaxial-base NPN power transistor |
SGS-ATES |
| 1862 |
2N3716 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 1863 |
2N3724 |
High speed NPN silicon planar epitaxial High-Voltage, High-Current Transistor |
ITT Semiconductors |
| 1864 |
2N3725 |
High speed NPN silicon planar epitaxial High-Voltage, High-Current Transistor |
ITT Semiconductors |
| 1865 |
2N3740 |
PNP Power Transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
| 1866 |
2N3741 |
PNP Power Transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
| 1867 |
2N3771 |
Silicon HOMETAXIAL NPN transistor, high current, high power amplifier |
SGS-ATES |
| 1868 |
2N3772 |
Silicon HOMETAXIAL NPN transistor, high current, high power amplifier |
SGS-ATES |
| 1869 |
2N3773 |
Silicon HOMETAXIAL NPN transistor, high current, high voltage switch |
SGS-ATES |
| 1870 |
2N3783 |
PNP germanium epitaxial mesa transistor |
Motorola |
| 1871 |
2N3784 |
PNP germanium epitaxial mesa transistor |
Motorola |
| 1872 |
2N3785 |
PNP germanium epitaxial mesa transistor |
Motorola |
| 1873 |
2N3789 |
80V Epitaxial-base NPN-PNP |
Comset Semiconductors |
| 1874 |
2N3789 |
Silicon epitaxial-base PNP power transistor |
SGS-ATES |
| 1875 |
2N3789 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 1876 |
2N3790 |
100V Epitaxial-base NPN-PNP |
Comset Semiconductors |
| 1877 |
2N3790 |
Silicon epitaxial-base PNP power transistor |
SGS-ATES |
| 1878 |
2N3790 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 1879 |
2N3791 |
80V Epitaxial-base NPN-PNP |
Comset Semiconductors |
| 1880 |
2N3791 |
Silicon P-N-P epitaxial-base high power transistor. -60V, 150W. |
General Electric Solid State |
| 1881 |
2N3791 |
Silicon epitaxial-base PNP power transistor |
SGS-ATES |
| 1882 |
2N3791 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 1883 |
2N3792 |
100V Epitaxial-base NPN-PNP |
Comset Semiconductors |
| 1884 |
2N3792 |
Silicon P-N-P epitaxial-base high power transistor. -80V, 150W. |
General Electric Solid State |
| 1885 |
2N3792 |
PNP SILICON EPITAXIAL BASE POWER TANSISTORS |
SemeLAB |
| 1886 |
2N3792 |
Silicon epitaxial-base PNP power transistor |
SGS-ATES |
| 1887 |
2N3792 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 1888 |
2N3839 |
Silicon NPN Epitaxial Planar RF Transistor |
RCA Solid State |
| 1889 |
2N3839 |
Epitaxial planar NPN transistor intended for amplifier, oscillator and converter applications up to 500MHz, low noise |
SGS-ATES |
| 1890 |
2N3859 |
Planar epitaxial passivated NPN silicon transistor. 30V, 100mA. |
General Electric Solid State |
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