No. |
Part Name |
Description |
Manufacturer |
1981 |
2N4402 |
PNP Epitaxial Silicon Transistor |
Samsung Electronic |
1982 |
2N4402 |
PNP EXPITAXIAL SILICON TRANSISTOR |
Semtech |
1983 |
2N4402 |
Silicon PNP epitaxial transistor (PCT Process) |
TOSHIBA |
1984 |
2N4403 |
Si-Epitaxial PlanarTransistors |
Diotec Elektronische |
1985 |
2N4403 |
Planar epitaxial passivated PNP silicon transistor. -40V, -600mA. |
General Electric Solid State |
1986 |
2N4403 |
PNP Epitaxial Silicon Transistor |
Honey Technology |
1987 |
2N4403 |
PNP SILICON PLANAR EPITAXIAL TRANSISTORS |
Micro Electronics |
1988 |
2N4403 |
PNP Epitaxial Silicon Transistor |
Samsung Electronic |
1989 |
2N4403 |
PNP EXPITAXIAL SILICON TRANSISTOR |
Semtech |
1990 |
2N4403 |
Silicon PNP epitaxial transistor (PCT Process) |
TOSHIBA |
1991 |
2N4403SC |
EPITAXIAL PLANAR PNP TRANSISTOR |
Korea Electronics (KEC) |
1992 |
2N4409 |
NPN silicon epitaxial transistor, designed for driving neon display tubes |
Motorola |
1993 |
2N4410 |
NPN silicon epitaxial transistor, designed for driving neon display tubes |
Motorola |
1994 |
2N4424 |
Planar epitaxial passivated NPN silicon transistor. 40V, 500mA. |
General Electric Solid State |
1995 |
2N4427 |
Silicon NPN epitaxial planar transistor for input stages and driver stages in VHF amplifier circuits |
AEG-TELEFUNKEN |
1996 |
2N4427 |
Silicon planar epitaxial overlay transistors |
Philips |
1997 |
2N4427 |
Epitaxial planar NPN transistor designed for VHF class A, B or C amplifier and oscillator applications |
SGS-ATES |
1998 |
2N4427 |
Silicon NPN planar epitaxial transistor for driver stages in 175 MHz and 470 MHz transmitters at 12 V supply voltage |
VALVO |
1999 |
2N4428 |
Epitaxial planar NPN transistor designed for VHF-UHF class C amplifier output stages in military an industrial communications applications |
SGS-ATES |
2000 |
2N4895 |
Silicon epitaxial planar NPN transistor |
SGS-ATES |
2001 |
2N4896 |
Silicon epitaxial planar NPN transistor |
SGS-ATES |
2002 |
2N4897 |
Silicon epitaxial planar NPN transistor |
SGS-ATES |
2003 |
2N4898X |
PNP EPITAXIAL BASE MEDIUM POWER TRANSISTOR |
SemeLAB |
2004 |
2N4899X |
PNP EPITAXIAL BASE MEDIUM POWER TRANSISTOR |
SemeLAB |
2005 |
2N4900X |
PNP EPITAXIAL BASE MEDIUM POWER TRANSISTOR |
SemeLAB |
2006 |
2N4901 |
PNP silicon transistor, epitaxial base |
Comset Semiconductors |
2007 |
2N4901 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
2008 |
2N4902 |
PNP silicon transistor, epitaxial base |
Comset Semiconductors |
2009 |
2N4902 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
2010 |
2N4903 |
PNP silicon transistor, epitaxial base |
Comset Semiconductors |
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