| No. |
Part Name |
Description |
Manufacturer |
| 2011 |
2N4903 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
| 2012 |
2N4904 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
| 2013 |
2N4905 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
| 2014 |
2N4906 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
| 2015 |
2N4910X |
NPN EPITAXIAL POWER TRANSISTOR IN TO66 HERMETIC PACKAGE |
SemeLAB |
| 2016 |
2N4911X |
NPN EPITAXIAL POWER TRANSISTOR IN TO66 HERMETIC PACKAGE |
SemeLAB |
| 2017 |
2N4912X |
NPN EPITAXIAL POWER TRANSISTOR IN TO66 HERMETIC PACKAGE |
SemeLAB |
| 2018 |
2N4921 |
NPN Epitaxial Power Transistor |
National Semiconductor |
| 2019 |
2N4922 |
NPN Epitaxial Power Transistor |
National Semiconductor |
| 2020 |
2N4923 |
NPN SILICON EPITAXIAL TRANSISTOR |
Boca Semiconductor Corporation |
| 2021 |
2N4923 |
NPN Epitaxial Power Transistor |
National Semiconductor |
| 2022 |
2N4932 |
Epitaxial silicon NPN planar RF power transistor of the overlay emitter electrode construction |
RCA Solid State |
| 2023 |
2N4933 |
Epitaxial silicon NPN planar RF power transistor of the overlay emitter electrode construction |
RCA Solid State |
| 2024 |
2N4953 |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 2025 |
2N4957 |
Silicon PNP Epitaxial Planar HF Transistor |
IPRS Baneasa |
| 2026 |
2N4958 |
Silicon PNP Epitaxial Planar HF Transistor |
IPRS Baneasa |
| 2027 |
2N4959 |
Silicon PNP Epitaxial Planar HF Transistor |
IPRS Baneasa |
| 2028 |
2N5010 |
SILICON EPITAXIAL NPN TRANSISTOR |
SemeLAB |
| 2029 |
2N5014 |
SILICON EPITAXIAL NPN TRANSISTOR |
SemeLAB |
| 2030 |
2N5038 |
Silicon planar multiepitaxial NPN transistor |
SGS-ATES |
| 2031 |
2N5039 |
Silicon planar multiepitaxial NPN transistor |
SGS-ATES |
| 2032 |
2N5086 |
PNP EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
| 2033 |
2N5087 |
PNP Epitaxial Silicon Transistor |
Samsung Electronic |
| 2034 |
2N5088 |
NPN Epitaxial Silicon Transistor |
Samsung Electronic |
| 2035 |
2N5089 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
| 2036 |
2N5109 |
Silicon NPN Epitaxial-Planar HF Transistor |
IPRS Baneasa |
| 2037 |
2N5109 |
Epitaxial planar NPN transistor, designed for CATV-MATV amplifier applications over a wide frequency range (40 to 860MHz) |
SGS-ATES |
| 2038 |
2N5109A |
Silicon NPN Epitaxial-Planar HF Transistor |
IPRS Baneasa |
| 2039 |
2N5109B |
Silicon NPN Epitaxial-Planar HF Transistor |
IPRS Baneasa |
| 2040 |
2N5179 |
Silicon NPN Epitaxial Planar RF Transistor for UHF Applications in Military Communications and Industrial Equipment |
RCA Solid State |
| | | |
