No. |
Part Name |
Description |
Manufacturer |
1951 |
2N4124 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
1952 |
2N4124 |
Silicon NPN epitaxial transistor (PCT Process) |
TOSHIBA |
1953 |
2N4125 |
Planar epitaxial passivated PNP silicon transistor. -30V, 200mA. |
General Electric Solid State |
1954 |
2N4125 |
PNP EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
1955 |
2N4125 |
Silicon PNP epitaxial transistor (PCT Process) |
TOSHIBA |
1956 |
2N4126 |
Planar epitaxial passivated PNP silicon transistor. -25V, 200mA. |
General Electric Solid State |
1957 |
2N4126 |
PNP EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
1958 |
2N4126 |
Silicon PNP epitaxial transistor (PCT Process) |
TOSHIBA |
1959 |
2N4347 |
High voltage hometaxial NPN transistor in Jedec TO-3 metal case |
SGS-ATES |
1960 |
2N4347 |
Silicon HOMETAXIAL NPN transistor, high voltage amplifier |
SGS-ATES |
1961 |
2N4348 |
Silicon HOMETAXIAL NPN transistor, high current, high voltage amplifier |
SGS-ATES |
1962 |
2N4400 |
Si-Epitaxial PlanarTransistors |
Diotec Elektronische |
1963 |
2N4400 |
Planar epitaxial passivated NPN silicon transistor. 40V, 600mA. |
General Electric Solid State |
1964 |
2N4400 |
NPN Epitaxial Silicon Transistor |
Honey Technology |
1965 |
2N4400 |
NPN SILICON PLANAR EPITAXIAL TRANSISTORS |
Micro Electronics |
1966 |
2N4400 |
NPN Epitaxial Silicon Transistor |
Samsung Electronic |
1967 |
2N4400 |
NPN EXPITAXIAL SILICON TRANSISTOR |
Semtech |
1968 |
2N4400 |
Silicon NPN epitaxial transistor (PCT Process) |
TOSHIBA |
1969 |
2N4401 |
Si-Epitaxial PlanarTransistors |
Diotec Elektronische |
1970 |
2N4401 |
Planar epitaxial passivated NPN silicon transistor. 40V, 600mA. |
General Electric Solid State |
1971 |
2N4401 |
NPN Epitaxial Silicon Transistor |
Honey Technology |
1972 |
2N4401 |
NPN SILICON PLANAR EPITAXIAL TRANSISTORS |
Micro Electronics |
1973 |
2N4401 |
NPN Epitaxial Silicon Transistor |
Samsung Electronic |
1974 |
2N4401 |
NPN EXPITAXIAL SILICON TRANSISTOR |
Semtech |
1975 |
2N4401 |
Silicon NPN epitaxial planar transistor (PCT Process) |
TOSHIBA |
1976 |
2N4401SC |
EPITAXIAL PLANAR NPN TRANSISTOR |
Korea Electronics (KEC) |
1977 |
2N4402 |
Si-Epitaxial PlanarTransistors |
Diotec Elektronische |
1978 |
2N4402 |
Planar epitaxial passivated PNP silicon transistor. -40V, -600mA. |
General Electric Solid State |
1979 |
2N4402 |
PNP Epitaxial Silicon Transistor |
Honey Technology |
1980 |
2N4402 |
PNP SILICON PLANAR EPITAXIAL TRANSISTORS |
Micro Electronics |
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