No. |
Part Name |
Description |
Manufacturer |
2041 |
2N5179 |
Epitaxial planar NPN transistor intended for low-noise tuned-amplifier and converter applications up to 500MHz |
SGS-ATES |
2042 |
2N5180 |
Silicon NPN Epitaxial Planar RF Transistor |
RCA Solid State |
2043 |
2N5190 |
NPN Epitaxial Power Transistor |
National Semiconductor |
2044 |
2N5190 |
Silicon epitaxial-base NPN medium power transistor |
SGS-ATES |
2045 |
2N5190 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
2046 |
2N5191 |
NPN Epitaxial Power Transistor |
National Semiconductor |
2047 |
2N5191 |
Silicon epitaxial-base NPN medium power transistor |
SGS-ATES |
2048 |
2N5191 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
2049 |
2N5192 |
Silicon epitaxial-base NPN medium power transistor |
SGS-ATES |
2050 |
2N5192 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
2051 |
2N5193 |
Silicon epitaxial-base PNP medium power transistor in Jedec TO-126 plastic package |
SGS-ATES |
2052 |
2N5193 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
2053 |
2N5194 |
Silicon epitaxial-base PNP medium power transistor in Jedec TO-126 plastic package |
SGS-ATES |
2054 |
2N5194 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
2055 |
2N5195 |
Silicon epitaxial-base PNP medium power transistor in Jedec TO-126 plastic package |
SGS-ATES |
2056 |
2N5195 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
2057 |
2N5202 |
HIGH SPEED EPITAXIAL COLLECTOR SILICON NPN PLANAR TRANSISTORS |
General Electric Solid State |
2058 |
2N5209 |
NPN Epitaxial Silicon Transistor |
Samsung Electronic |
2059 |
2N5210 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
2060 |
2N5232 |
Planar epitaxial passivated NPN silicon transistor. 50V, 100mA. |
General Electric Solid State |
2061 |
2N5232A |
Planar epitaxial passivated NPN silicon transistor. 50V, 100mA. |
General Electric Solid State |
2062 |
2N5249 |
Planar epitaxial passivated NPN silicon transistor. 50V, 100mA. |
General Electric Solid State |
2063 |
2N5249A |
Planar epitaxial passivated NPN silicon transistor. 50V, 100mA. |
General Electric Solid State |
2064 |
2N5306 |
Planar epitaxial passivated NPN silicon Darlington transistor. 25V, 300mA. |
General Electric Solid State |
2065 |
2N5307 |
Planar epitaxial passivated NPN silicon Darlington transistor. 40V, 300mA. |
General Electric Solid State |
2066 |
2N5308 |
Planar epitaxial passivated NPN silicon Darlington transistor. 40V, 300mA. |
General Electric Solid State |
2067 |
2N5308A |
Planar epitaxial passivated NPN silicon Darlington transistor. 40V, 300mA. |
General Electric Solid State |
2068 |
2N5336 |
Silicon epitaxial planar NPN transistor |
SGS-ATES |
2069 |
2N5337 |
Silicon epitaxial planar NPN transistor |
SGS-ATES |
2070 |
2N5337A-220M |
SILICON NPN EPITAXIAL BASE IN TO220 METAL PACKAGE |
SemeLAB |
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