No. |
Part Name |
Description |
Manufacturer |
1801 |
JANSR2N5401UBG |
Hi-Rel PNP bipolar transistor 150 V, 0.5 A |
ST Microelectronics |
1802 |
JANSR2N5401UBT |
Hi-Rel PNP bipolar transistor 150 V, 0.5 A |
ST Microelectronics |
1803 |
JANSR2N5551UBG |
Hi-Rel NPN bipolar transistor 160 V, 0.5 A |
ST Microelectronics |
1804 |
JANSR2N5551UBT |
Hi-Rel NPN bipolar transistor 160 V, 0.5 A |
ST Microelectronics |
1805 |
KS534505 |
Single Bipolar Transistor Module (50 Amperes/600 Volts) |
Powerex Power Semiconductors |
1806 |
KT234505 |
Split-dual bipolar transistor module. 100A, 600V. |
Powerex Power Semiconductors |
1807 |
LBN150B01 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V |
Diodes |
1808 |
LBN150B01-7 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V |
Diodes |
1809 |
LPT16ED |
30 GHz SiGe Bipolar Transistor Final |
SiGe Semiconductor |
1810 |
LT5817 |
PNP Bipolar Transistor, High Frequency, High Voltage for CRT Driver Applications |
TRW |
1811 |
LT5839 |
PNP Bipolar Transistor, High Frequency, High Voltage for CRT Driver Applications |
TRW |
1812 |
M57115L-01 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
1813 |
M57116L-01 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
1814 |
M57120L |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
1815 |
M57140-01 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
1816 |
M57145L-01 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
1817 |
M57146U-01 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
1818 |
M57147AU-01 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
1819 |
M57161L-01 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
1820 |
M57175L-01 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
1821 |
M57184N-715 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
1822 |
M57959L |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
1823 |
M57962L |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
1824 |
MG300Q1US11 |
INSULATED GATE BIPOLAR TRANSISTOR |
TOSHIBA |
1825 |
MGP11N60E |
Insulated Gate Bipolar Transistor |
Motorola |
1826 |
MGP11N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
1827 |
MGP11N60ED-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
1828 |
MGP14N60E |
Insulated Gate Bipolar Transistor |
Motorola |
1829 |
MGP14N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
1830 |
MGP15N60U |
Insulated Gate Bipolar Transistor |
Motorola |
| | | |