| No. |
Part Name |
Description |
Manufacturer |
| 1861 |
MGW20N60D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
Motorola |
| 1862 |
MGW21N60ED |
Insulated Gate Bipolar Transistor |
Motorola |
| 1863 |
MGW21N60ED-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 1864 |
MGW30N60 |
Insulated Gate Bipolar Transistor |
Motorola |
| 1865 |
MGY20N120D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
Motorola |
| 1866 |
MGY20N120D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel |
ON Semiconductor |
| 1867 |
MGY20N120D-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 1868 |
MGY25N120 |
Insulated Gate Bipolar Transistor |
Motorola |
| 1869 |
MGY25N120 |
Insulated Gate Bipolar Transistor N-Channel |
ON Semiconductor |
| 1870 |
MGY25N120-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 1871 |
MGY25N120D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
Motorola |
| 1872 |
MGY25N120D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel |
ON Semiconductor |
| 1873 |
MGY25N120D-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 1874 |
MGY30N60D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
Motorola |
| 1875 |
MGY40N60 |
Insulated Gate Bipolar Transistor |
Motorola |
| 1876 |
MGY40N60D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
Motorola |
| 1877 |
MJ3202A |
Complementary NPN-PNP silicon power bipolar transistor |
Motorola |
| 1878 |
MJD31C |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V |
Diodes |
| 1879 |
MJD31C-13 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V |
Diodes |
| 1880 |
MJD31CQ |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V |
Diodes |
| 1881 |
MJD31CQ-13 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V |
Diodes |
| 1882 |
MJD32C |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V |
Diodes |
| 1883 |
MJD32C-13 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V |
Diodes |
| 1884 |
MJD32CQ |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V |
Diodes |
| 1885 |
MJL3281A |
Complementary NPN-PNP Silicon Power Bipolar Transistor |
ON Semiconductor |
| 1886 |
MJL3281A-D |
Complementary NPN-PNP Silicon Power Bipolar Transistor |
ON Semiconductor |
| 1887 |
MJW1302A |
Complementary NPN-PNP Silicon Power Bipolar Transistors |
ON Semiconductor |
| 1888 |
MJW3281A |
Complementary NPN-PNP Silicon Power Bipolar Transistors |
ON Semiconductor |
| 1889 |
MJW3281A-D |
Complementary NPN-PNP Silicon Power Bipolar Transistors |
ON Semiconductor |
| 1890 |
MM018-06L |
3 PHASE N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR IGBT BRIDGE |
Microsemi |
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