| No. |
Part Name |
Description |
Manufacturer |
| 1801 |
IDT74SSTVF16859NLG |
13-Bit to 26-Bit Registered Buffer with SSTL I/O |
IDT |
| 1802 |
IDT74SSTVF16859NLG8 |
13-Bit to 26-Bit Registered Buffer with SSTL I/O |
IDT |
| 1803 |
IDT74SSTVF16859PA |
13-Bit to 26-Bit Registered Buffer with SSTL I/O |
IDT |
| 1804 |
IDT74SSTVF16859PA8 |
13-Bit to 26-Bit Registered Buffer with SSTL I/O |
IDT |
| 1805 |
IDT74SSTVF16859PAG |
13-Bit to 26-Bit Registered Buffer with SSTL I/O |
IDT |
| 1806 |
IDT74SSTVF16859PAG8 |
13-Bit to 26-Bit Registered Buffer with SSTL I/O |
IDT |
| 1807 |
IRF1607 |
75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 1808 |
IRF1607PBF |
75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 1809 |
ISF161C |
Recovery Rectifier |
Rectron Semiconductor |
| 1810 |
ISF162C |
Recovery Rectifier |
Rectron Semiconductor |
| 1811 |
ISF163C |
Recovery Rectifier |
Rectron Semiconductor |
| 1812 |
ISF164C |
Recovery Rectifier |
Rectron Semiconductor |
| 1813 |
ISF165C |
Recovery Rectifier |
Rectron Semiconductor |
| 1814 |
ISF166C |
Recovery Rectifier |
Rectron Semiconductor |
| 1815 |
ISF167C |
Recovery Rectifier |
Rectron Semiconductor |
| 1816 |
JSFF160 |
Eight channel multiplex switch |
SESCOSEM |
| 1817 |
K4F16(7)0811(2)D |
2M x 8Bit CMOS Dynamic RAM with Fast Page Mode Data Sheet |
Samsung Electronic |
| 1818 |
K4F160411C-B50 |
4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 1819 |
K4F160411C-B60 |
4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 1820 |
K4F160411C-F50 |
4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 1821 |
K4F160411C-F60 |
4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 1822 |
K4F160411D |
4M x 4Bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
| 1823 |
K4F160411D-B |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 1824 |
K4F160411D-F |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 1825 |
K4F160412C-B50 |
4M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns |
Samsung Electronic |
| 1826 |
K4F160412C-B60 |
4M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
| 1827 |
K4F160412C-F50 |
4M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns |
Samsung Electronic |
| 1828 |
K4F160412C-F60 |
4M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
| 1829 |
K4F160412D |
4M x 4Bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
| 1830 |
K4F160412D-B |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
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