No. |
Part Name |
Description |
Manufacturer |
1831 |
K4F160412D-F |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
1832 |
K4F160811D |
2M x 8Bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
1833 |
K4F160811D-B |
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
1834 |
K4F160811D-F |
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
1835 |
K4F160812D |
2M x 8Bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
1836 |
K4F160812D-B |
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
1837 |
K4F160812D-F |
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
1838 |
K6F1616R6M FAMILY |
1M x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet |
Samsung Electronic |
1839 |
K6F1616T6B |
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
1840 |
K6F1616T6B-EF55 |
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
1841 |
K6F1616T6B-EF70 |
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
1842 |
K6F1616T6B-F |
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
1843 |
K6F1616T6B-TF55 |
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
1844 |
K6F1616T6B-TF70 |
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
1845 |
K6F1616T6C |
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
1846 |
K6F1616T6C-F |
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
1847 |
K6F1616T6C-FF55 |
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
1848 |
K6F1616T6C-FF70 |
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
1849 |
K6F1616U6A FAMILY |
1M x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet |
Samsung Electronic |
1850 |
K6F1616U6C |
16Mb(1M x 16 bit) Low Power SRAM |
Samsung Electronic |
1851 |
K6F1616U6M |
1M x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
1852 |
K6F1616U6M FAMILY |
1M x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet |
Samsung Electronic |
1853 |
K6F1616U6M-F |
1M x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
1854 |
K9F1608W0A |
-2M x 8 Bit NAND Flash Memory |
Samsung Electronic |
1855 |
K9F1608W0A-TCB0 |
2M x 8 Bit NAND Flash Memory |
Samsung Electronic |
1856 |
K9F1608W0A-TIB0 |
2M x 8 Bit NAND Flash Memory |
Samsung Electronic |
1857 |
KCF16A20 |
KCF16A20, DUAL DIODES - CATHODE COMMON |
Nihon |
1858 |
KCF16A20 |
KCF16A20, DUAL DIODES - CATHODE COMMON |
Nihon |
1859 |
KCF16A40 |
FRD |
Nihon |
1860 |
KCF16A60 |
FRD DUAL DIODES CATHODE COMMON |
Nihon |
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