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Datasheets for SWITCHING APPLICATION

Datasheets found :: 2496
Page: | 57 | 58 | 59 | 60 | 61 | 62 | 63 | 64 | 65 |
No. Part Name Description Manufacturer
1801 HN1C03FU Transistor Silicon Npn Epitaxial Type (PCT Process) For Muting and Switching Applications TOSHIBA
1802 HN1D01F Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application TOSHIBA
1803 HN1D01FU Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application TOSHIBA
1804 HN1D02F Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application TOSHIBA
1805 HN1D02FU Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application TOSHIBA
1806 HN1D03F Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application TOSHIBA
1807 HN1D03FU Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application TOSHIBA
1808 HN1J02FU Field Effect Transistor Silicon P Channel Mos Type High Speed Switching Applications Analog Switch Applications TOSHIBA
1809 HN1K02FU Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications TOSHIBA
1810 HN1K03FU Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications TOSHIBA
1811 HN1K04FU Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications TOSHIBA
1812 HN1K05FU Field Effect Transistor Silicon N Channel MOS Type For Portable Devices High Speed Switching Applications Interface Applications TOSHIBA
1813 HN1K06FU Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications TOSHIBA
1814 HN1L02FU Field Effect Transistor Silicon N-P Channel MOS Type High Speed Switching Applications Analog Switch Applications TOSHIBA
1815 HN1L03FU Field Effect Transistor Silicon N-P Channel MOS Type High Speed Switching Applications Analog Switch Applications TOSHIBA
1816 HN2D01F Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application TOSHIBA
1817 HN2D01FU Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application TOSHIBA
1818 HN2D02FU Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application TOSHIBA
1819 HN2S01F Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching Application TOSHIBA
1820 HN2S01FU Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching Application TOSHIBA
1821 HN4B101J Power transistor for high-speed switching applications TOSHIBA
1822 HN4B102J Power transistor for high-speed switching applications TOSHIBA
1823 HN4C05JU Multi Chip Discrete Device Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications TOSHIBA
1824 HN4K03JU Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications TOSHIBA
1825 IGB15N60T 1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ... Infineon
1826 IGB50N60T 1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ... Infineon
1827 IGP30N60T 1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ... Infineon
1828 IGP50N60T 1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ... Infineon
1829 IGW30N60T 1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ... Infineon
1830 IGW50N60T 1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ... Infineon


Datasheets found :: 2496
Page: | 57 | 58 | 59 | 60 | 61 | 62 | 63 | 64 | 65 |



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