No. |
Part Name |
Description |
Manufacturer |
1801 |
HN1C03FU |
Transistor Silicon Npn Epitaxial Type (PCT Process) For Muting and Switching Applications |
TOSHIBA |
1802 |
HN1D01F |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
1803 |
HN1D01FU |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
1804 |
HN1D02F |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
1805 |
HN1D02FU |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
1806 |
HN1D03F |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
1807 |
HN1D03FU |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
1808 |
HN1J02FU |
Field Effect Transistor Silicon P Channel Mos Type High Speed Switching Applications Analog Switch Applications |
TOSHIBA |
1809 |
HN1K02FU |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications |
TOSHIBA |
1810 |
HN1K03FU |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications |
TOSHIBA |
1811 |
HN1K04FU |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications |
TOSHIBA |
1812 |
HN1K05FU |
Field Effect Transistor Silicon N Channel MOS Type For Portable Devices High Speed Switching Applications Interface Applications |
TOSHIBA |
1813 |
HN1K06FU |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications |
TOSHIBA |
1814 |
HN1L02FU |
Field Effect Transistor Silicon N-P Channel MOS Type High Speed Switching Applications Analog Switch Applications |
TOSHIBA |
1815 |
HN1L03FU |
Field Effect Transistor Silicon N-P Channel MOS Type High Speed Switching Applications Analog Switch Applications |
TOSHIBA |
1816 |
HN2D01F |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
1817 |
HN2D01FU |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
1818 |
HN2D02FU |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
1819 |
HN2S01F |
Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching Application |
TOSHIBA |
1820 |
HN2S01FU |
Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching Application |
TOSHIBA |
1821 |
HN4B101J |
Power transistor for high-speed switching applications |
TOSHIBA |
1822 |
HN4B102J |
Power transistor for high-speed switching applications |
TOSHIBA |
1823 |
HN4C05JU |
Multi Chip Discrete Device Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications |
TOSHIBA |
1824 |
HN4K03JU |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications |
TOSHIBA |
1825 |
IGB15N60T |
1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ... |
Infineon |
1826 |
IGB50N60T |
1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ... |
Infineon |
1827 |
IGP30N60T |
1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ... |
Infineon |
1828 |
IGP50N60T |
1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ... |
Infineon |
1829 |
IGW30N60T |
1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ... |
Infineon |
1830 |
IGW50N60T |
1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ... |
Infineon |
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