No. |
Part Name |
Description |
Manufacturer |
1831 |
IGW75N60T |
1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ... |
Infineon |
1832 |
IR2114 |
600V Half Bridge Driver IC for Power Switching Applications in a 24 Lead SSOP package |
International Rectifier |
1833 |
IR21141 |
600V Half Bridge Driver IC for Power Switching Applications in a 24 Lead SSOP package |
International Rectifier |
1834 |
IR21141SSTRPBF |
600V Half Bridge Driver IC for Power Switching Applications in a 24 Lead SSOP package |
International Rectifier |
1835 |
IR2114SSTRPBF |
600V Half Bridge Driver IC for Power Switching Applications in a 24 Lead SSOP package |
International Rectifier |
1836 |
IR2214 |
Half Bridge Driver IC for Power Switching Applications in a 24 Lead SSOP package |
International Rectifier |
1837 |
IR22141SS |
Half Bridge Driver IC for Power Switching Applications in a 24 Lead SSOP package. |
International Rectifier |
1838 |
IR22141SSTRPBF |
1200V Half Bridge Driver IC for Power Switching Applications in a 24 Lead SSOP package |
International Rectifier |
1839 |
IR2214SS |
Half Bridge Driver IC for Power Switching Applications in a 24 Lead SSOP package |
International Rectifier |
1840 |
IR2214SSTRPBF |
1200V Half Bridge Driver IC for Power Switching Applications in a 24 Lead SSOP package |
International Rectifier |
1841 |
IRF640NSTR |
N-channel power MOSFET for fast switching applications, 200V, 18A |
International Rectifier |
1842 |
IRG7PH35UD1M |
1200V UltraFast Discrete IGBT in a TO-247 package with Ultra-Low Vf Diode For Induction Heating and Soft Switching Applications |
International Rectifier |
1843 |
IRG7PH35UD1MPBF |
1200V UltraFast Discrete IGBT in a TO-247 package with Ultra-Low Vf Diode For Induction Heating and Soft Switching Applications |
International Rectifier |
1844 |
JAN2N559-1 |
PNP germanium mesa transistor designed for military and industrial high-reliability, high-speed switching applications |
Motorola |
1845 |
JAN2N559-2 |
PNP germanium mesa transistor designed for military and industrial high-reliability, high-speed switching applications |
Motorola |
1846 |
JAN2N559-3 |
PNP germanium mesa transistor designed for military and industrial high-reliability, high-speed switching applications |
Motorola |
1847 |
K142 |
Very High-Speed Switching Applications |
SANYO |
1848 |
K246 |
Ultrahigh-Speed Switching Applications |
SANYO |
1849 |
K246 |
Ultrahigh-Speed Switching Applications |
SANYO |
1850 |
KSA910 |
PNP (DRIVER STAGE AUDIO AMPLIFIER HIGH VOLTAGE SWITCHING APPLICATIONS) |
Samsung Electronic |
1851 |
KSE2955 |
General Purpose and Switching Applications |
Fairchild Semiconductor |
1852 |
KSE45H1 |
General Purpose Power Switching Applications |
Fairchild Semiconductor |
1853 |
KSE45H10 |
General Purpose Power Switching Applications |
Fairchild Semiconductor |
1854 |
KSE45H2 |
General Purpose Power Switching Applications |
Fairchild Semiconductor |
1855 |
KSE45H4 |
General Purpose Power Switching Applications |
Fairchild Semiconductor |
1856 |
KSE45H5 |
General Purpose Power Switching Applications |
Fairchild Semiconductor |
1857 |
KSE45H7 |
General Purpose Power Switching Applications |
Fairchild Semiconductor |
1858 |
KSE8355T |
General Purpose and Switching Applications |
Fairchild Semiconductor |
1859 |
KSR1001 |
NPN (SWITCHING APPLICATION) |
Samsung Electronic |
1860 |
KSR1002 |
NPN (SWITCHING APPLICATION) |
Samsung Electronic |
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